20.500.12556/RUNG-2888-dcaf5e62-7dd1-f27c-a193-23b65dfc2acc
Effect of gamma irradiation on Schottky-contacted vertically aligned ZnO nanorod-based hydrogen sensor
We report the impact of gamma irradiation on the performance of a gold Schottky-contacted ZnO nanorod-based hydrogen sensor. RF-sputtered vertically aligned highly c-axis-oriented ZnO NRs were grown on Si(100) substrate. X-ray diffraction shows no significant change in crystal structure at low gamma doses from 1 to 5 kGy. As gamma irradiation doses increase to 10 kGy, the single crystalline ZnO structure converts to polycrystalline. The photoluminescence spectra also shows suppression of the near-band emission peak and the huge wide-band spectrum indicates the generation of structural defects at high gamma doses. At 1 kGy, the hydrogen sensor response was enhanced from 67% to 77% for 1% hydrogen in pure argon at a 150 °C operating temperature. However, at 10 kGy, the relative response decreases to 33.5%. High gamma irradiation causes displacement damage and defects in ZnO NRs, and as a result, degrades the sensor's performance as a result. Low gamma irradiation doses activate the ZnO NR surface through ionization, which enhances the sensor performance. The relative response of the hydrogen sensor was enhanced by ∼14.9% with respect to pristine ZnO using 1 kGy gamma ray treatment. © 2016 IOP Publishing Ltd.
ZnO
nanorods
gamma irradiation
sensor
true
true
true
Angleški jezik
Ni določen
Delo ni kategorizirano
2017-01-12 11:21:47
2017-01-12 12:14:16
2023-06-09 03:19:15
0000-00-00 00:00:00
2016
0
0
8
27
345502
2016
0000-00-00
NiDoloceno
NiDoloceno
NiDoloceno
0000-00-00
0000-00-00
0000-00-00
4632571
10.1088/0957-4484/27/34/345502
URN:SI:UNG:REP:5SNVQ2MG
Univerza v Novi Gorici
0
1
0