Role of transport band edge variation on delocalized charge transport in high-mobility crystalline organic semiconductorsBratina, Gvido (Avtor)
Kadashchuk, Andrey (Avtor)
Pavlica, Egon (Avtor)
Tong, Fei (Avtor)
organic semiconducotrstime of flighttransportWe demonstrate that the degree of charge delocalization has a strong impact on polarization energy and thereby on the position of the transport band edge in organic semiconductors. This gives rise to long-range potential fluctuations, which govern the electronic transport through delocalized states in organic crystalline layers. This concept is employed to formulate an analytic model that explains a negative field dependence coupled with a positive temperature dependence of the charge mobility observed by a lateral time-of-flight technique in a high-mobility crystalline organic layer. This has important implications for the further understanding of the charge transport via delocalized states in organic semiconductors.20172017-09-13 05:23:29Delo ni kategorizirano3266COBISS_ID: 4915195NUK URN: URN:SI:UNG:REP:BN4JDYR5sl