20.500.12556/RUNG-4125-b64e07f5-cdd5-f789-c893-9c8baf111929
EPR parameters of E' centers in v-SiO2 from first-principles calculations
Parametri EPR dei centri E' in v-SiO2 ottenuti mediante calcoli da principi primi
silica
paramagnetic defects
EPR
disordered semiconductors
true
true
false
Angleški jezik
Italijanski jezik
Delo ni kategorizirano
2018-10-03 07:44:38
2018-10-03 09:06:58
2023-06-09 03:26:37
0000-00-00 00:00:00
2014
0
0
12
90
1
2014
0000-00-00
Zaloznikova
NiDoloceno
NiDoloceno
0000-00-00
0000-00-00
0000-00-00
3581947
1098-0121
14196519
doi.org/10.1103/PhysRevB.90.014108
URN:SI:UNG:REP:Q9G2XWLD
Univerza v Novi Gorici
0
1
0