Chemical Instability of an Interface between Silver and Bi2Se3 Topological Insulator at Room TemperatureFerfolja, Katja (Avtor)
Valant, Matjaž (Avtor)
Mikulska, Iuliia (Avtor)
Gardonio, Sandra (Avtor)
Fanetti, Mattia (Avtor)
topological insulatorsAgthin metal filmsinterfacesredox reactionUnderstanding an interaction at an interface between a topological insulator and a metal is of critical importance when designing electronic and spintronic devices or when such systems are used in catalysis. In this paper, we report on a chemical instability of the interface between Bi2Se3 and Ag studied by X-ray powder diffraction and electron microscopy. We present strong experimental evidence of a redox solid-state reaction occurring at the interface with kinetics that is significant already at room temperature. The reaction yields Ag2Se, AgBiSe2, and Bi. The unexpected room-temperature chemical instability of the interface should be considered for all future theoretical and applicative studies involving the interface between Bi2Se3 and Ag.20182020-06-15 08:03:31Delo ni kategorizirano5565COBISS_ID: 5205243DOI: 10.1021/acs.jpcc.8b01543NUK URN: URN:SI:UNG:REP:MCWSSWH4sl