Electronic properties of phases in the quasi-binary Bi[sub]2Se[sub]3-Bi[sub]2S[sub]3 systemBenher, Zipporah Rini (Avtor)
Gardonio, Sandra (Avtor)
Fanetti, Mattia (Avtor)
Moras, Paolo (Avtor)
Kundu, Asish K. (Avtor)
Bigi, Chiara (Avtor)
Valant, Matjaž (Avtor)
topological insulatorquasi-binary Bi2Se3-Bi2S3 systemelectronic propertiesWe explored the properties of the quasi-binary Bi2Se3–Bi2S3 system over a wide compositional range. X-ray diffraction analysis demonstrates that rhombohedral crystals can be synthesized within the solid solution interval 0–22 mol% Bi2S3, while at 33 mol% Bi2S3 only orthorhombic crystals are obtained. Core level photoemission spectroscopy reveals the presence of Bi3+, Se2− and S2− species and the absence of metallic species, thus indicating that S incorporation into Bi2Se3 proceeds prevalently through the substitution of Se with S. Spin- and angle-resolved photoemission spectroscopy shows that topological surface states develop on the surfaces of the Bi2Se3−ySy (y ≤0.66) rhombohedral crystals, in close analogy with the prototypical case of Bi2Se3, while the orthorhombic crystals with higher S content turn out to be trivial semiconductors. Our results connect unambiguously the phase diagram and electronic properties of the Bi2Se3–Bi2S3 system.20212021-03-29 08:20:07Neznano6373COBISS_ID: 57602051UDK: 620.1/.2ISSN pri članku: 2050-7526DOI: 10.1039/D0TC05121GNUK URN: URN:SI:UNG:REP:FDPEOGBOsl