Repository of University of Nova Gorica

Search the repository
A+ | A- | Help | SLO | ENG

Query: search in
search in
search in
search in
* old and bolonia study programme


51 - 58 / 58
First pagePrevious page123456Next pageLast page
Improved photocatalytic activity of anatase-rutile nanocomposites induced by low-temperature sol-gel Sn-modification of TiO2
Ksenija Maver, Iztok Arčon, Urška Lavrenčič Štangar, Mattia Fanetti, Saim Emin, Matjaž Valant, 2020, original scientific article

Abstract: The Sn-modified TiO2 photocatalysts are prepared by low-temperature sol-gel processing based on organic titanium and tin precursors with varied Sn concentrations (from 0.1–20 mol .%). The role of Sn dopant as the promotor of the formation of TiO2 rutile crystalline phase is explained and the optimal Sn concentration for preparation of efficient Sn-modified titania photocatalyst is determined. Up to 40 % increase in photocatalytic activity is achieved in Sn-modified TiO2 photocatalytic thin films dried at 150 °C with low Sn concentrations in the range from 0.1 to 1 mol .%. At low Sn concentrations optimal ratio between anatase and rutile (nano)crystals is obtained, which facilitates charge separation at the TiO2 photocatalyst’s surface. When the concentration of Sn increases above 5 mol.% or when the films are calcined at 500 °C, the relative amount of rutile phase with inferior photocatalytic activity, increases and the nanocrystals of titania grow, leading to fewer active sites per unit mass and the reduction of activity in comparison to unmodified TiO2.
Found in: osebi
Keywords: Anatase-rutile Sn-modified TiO2 XAS analysis Photocatalytic activity
Published: 10.02.2020; Views: 915; Downloads: 0
.pdf Fulltext (537,61 KB)

Chemical Instability of an Interface between Silver and Bi2Se3 Topological Insulator at Room Temperature
Katja Ferfolja, Matjaž Valant, I. Mikulska, Sandra Gardonio, Mattia Fanetti, 2018, original scientific article

Abstract: Understanding an interaction at an interface between a topological insulator and a metal is of critical importance when designing electronic and spintronic devices or when such systems are used in catalysis. In this paper, we report on a chemical instability of the interface between Bi2Se3 and Ag studied by X-ray powder diffraction and electron microscopy. We present strong experimental evidence of a redox solid-state reaction occurring at the interface with kinetics that is significant already at room temperature. The reaction yields Ag2Se, AgBiSe2, and Bi. The unexpected room-temperature chemical instability of the interface should be considered for all future theoretical and applicative studies involving the interface between Bi2Se3 and Ag.
Found in: osebi
Keywords: topological insulators, Ag, thin metal films, interfaces, redox reaction
Published: 17.06.2020; Views: 777; Downloads: 0
.pdf Fulltext (3,93 MB)

Electronic properties of phases in the quasi-binary Bi[sub]2Se[sub]3-Bi[sub]2S[sub]3 system
Zipporah Rini Benher, Sandra Gardonio, Mattia Fanetti, Paolo Moras, Asish K. Kundu, Chiara Bigi, Matjaž Valant, 2021, original scientific article

Abstract: We explored the properties of the quasi-binary Bi2Se3–Bi2S3 system over a wide compositional range. X-ray diffraction analysis demonstrates that rhombohedral crystals can be synthesized within the solid solution interval 0–22 mol% Bi2S3, while at 33 mol% Bi2S3 only orthorhombic crystals are obtained. Core level photoemission spectroscopy reveals the presence of Bi3+, Se2− and S2− species and the absence of metallic species, thus indicating that S incorporation into Bi2Se3 proceeds prevalently through the substitution of Se with S. Spin- and angle-resolved photoemission spectroscopy shows that topological surface states develop on the surfaces of the Bi2Se3−ySy (y ≤0.66) rhombohedral crystals, in close analogy with the prototypical case of Bi2Se3, while the orthorhombic crystals with higher S content turn out to be trivial semiconductors. Our results connect unambiguously the phase diagram and electronic properties of the Bi2Se3–Bi2S3 system.
Found in: osebi
Keywords: topological insulator, quasi-binary Bi2Se3-Bi2S3 system, electronic properties
Published: 29.03.2021; Views: 149; Downloads: 0
.pdf Fulltext (4,69 MB)

Structural, morphological and chemical properties of metal/topological insulator interfaces
Katja Ferfolja, 2021, doctoral dissertation

Abstract: Topological insulators (TIs) represent a new state of matter that possess a different band structure than regular insulators or conductors. They are characterized with a band gap in the bulk and conductive topological states on the surface, which are spin polarized and robust toward contamination or deformation of the surface. Since the intriguing properties of the TIs are localized at the surface, it is important to obtain knowledge of the possible phenomena happening at the interface between TIs and other materials. This is especially true in the case of metals, due to the fact that such interfaces will be present in the majority of foreseen TI applications. The presented study combines microscopy and spectroscopy techniques for characterization of morphology, stability and chemical interaction at the interface between TI and metals deposited by means of physical vapor deposition. Our research is based on the interface of Bi2Se3 topological insulator with Ag, Ti and Pt – metals that can be encountered in devices or applications predicted to utilize the special properties of topological insulators. STM and SEM imaging of Ag/Bi2Se3 interface showed that Ag atoms arrange on the surface in the form of islands, whereas significantly bigger agglomerates are found at the surface steps. The interface was found to be unstable in time and resulted in the absorption of the metal into the crystal at room temperature. Evidences of a chemical reaction at the Ag/Bi2Se3 interface are presented, showing that new phases (Ag2Se, AgBiSe2 and metallic Bi) are formed. Deposition of Ti on Bi2Se3 resulted in different morphologies depending on the film thickness. At a very low coverage (<1 Å) islands are formed. However, the islands growth is hindered before the completion of a full layer due to the occurrence of a chemical reaction. No surface features could be detected by SEM for Ti coverage up to 20 nm. In contrary, when Ti thickness reached 40 nm, compressive stress triggered buckling of the deposited film. XPS analysis revealed that a redox solid-state reaction occurs at the Ti/Bi2Se3 interface at room temperature forming titanium selenides and metallic Bi. The reaction has significant kinetics even at cryogenic temperature of 130 K. Pt forms a homogenous film over the whole substrate surface, which is stable in time at room temperature. Although the interface of Pt with Bi2Se3 was found to be i less reactive compared to Ag and Ti, an interfacial phase formed upon annealing to ∼90 °C was detected by TEM cross section experiment. A model for prediction of interfacial reactions between a metal and Bi2Se3 based on the standard reduction potential of the metals and Gibbs free energy for a model reaction is presented. Based on these two values the reaction can be expected to result in the formation of binary and/or ternary selenides and Bi. Presented work shows on the importance of metal/topological insulator interfaces characterization taking into account the possibility of a chemical reaction with all of its consequences. Results should be considered for future theoretical and applicative studies involving such interfaces as well as for the possible engineering of 2D TI heterostructures.
Found in: osebi
Keywords: topological insulators, topological surface states, Bi2Se3, thin films, Ag, Ti, Pt, morphology, interfaces, solid-state reaction, metal selenides, reactivity, stability, electron microscopy, dissertations
Published: 09.06.2021; Views: 26; Downloads: 2
URL Fulltext (0,00 KB)
This document has many files! More...

Search done in 0 sec.
Back to top