Repository of University of Nova Gorica

Search the repository
A+ | A- | Help | SLO | ENG

Query: search in
search in
search in
search in
* old and bolonia study programme

Options:
  Reset


1 - 3 / 3
First pagePrevious page1Next pageLast page
1.
2.
3.
Interface phenomena between CdTe and ZnTe: Cu back contact
Alessio Bosio, Roberta Ciprian, Alessio Lamperti, I Rago, Barbara Ressel, Greta Rosa, Matija Stupar, E Weschke, 2018, original scientific article

Abstract: Thin film technology has reached a maturity to achieve conversion efficiencies of the order of 22%. Among thin films, CdTe-based photovoltaic modules represent 80% of the total production. Nonetheless, some issues concerning back-contact are still open. In industrial process a chemical etching is required in order to make the CdTe film surface rich in Te. The Te-excess is fundamental in order to form a stable telluride compound with copper and to obtain an ohmic, low-resistance back-contact. Moreover, the Te-excess hinders the fast diffusion of copper in CdTe and its achievement of the junction region, preventing the destruction of the device. In this paper we study a ZnTe:Cu buffer layer deposited onto a CdTe film, characterized by a naturally Te-rich surface obtained with a particular chlorine heat treatment without any chemical etching. Copper diffusion and the CdTe/ZnTe:Cu interface were studied by x-ray
Found in: osebi
Keywords: solar cells, CdTe, ZnTe:Cu back contact
Published: 29.11.2018; Views: 684; Downloads: 0
.pdf Fulltext (2,23 MB)

Search done in 0 sec.
Back to top