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1. Electrical characteristics of the vertical GaN rectifiers fabricated on bulk GaN wafer Tanya Paskova, Andrew Hanser, Andrew A. Allerman, Mark Johnson, Ginger Wheeler, Minseo Park, John Williams, Claude Ahyi, Tamara Issacs-Smith, Patrick Gartland, Fei Tong, Yogesh Sharma, Siddharth Alur, Hui Xu, Yaqi Wang, Edward A. Preble, Keith R. Evans, 2011, original scientific article Found in: ključnih besedah Keywords: GaN, rectifier Published: 17.01.2017; Views: 3164; Downloads: 0 Fulltext (216,76 KB)

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