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1.
Effect of doping concentration on the ferromagnetic properties of Fe-doped BaTiO[sub]3
I. Mikulska, Iztok Arčon, Matjaž Valant, 2013, objavljeni povzetek znanstvenega prispevka na konferenci

Najdeno v: osebi
Ključne besede: barijev titanat, rentgenska absorpcijska spektroskopija, feromagnetizem
Objavljeno: 06.05.2014; Ogledov: 2845; Prenosov: 11
URL Polno besedilo (0,00 KB)

2.
Structural and magnetic properties of Fe-doped BaTiO [sub] 3 ceramics
I. Mikulska, 2014, doktorska disertacija

Najdeno v: osebi
Ključne besede: barijev titanat, kisikova vrzel, Fe rob K EXAFS, XANES, disertacije
Objavljeno: 22.01.2015; Ogledov: 2663; Prenosov: 208
URL Polno besedilo (0,00 KB)
Gradivo ima več datotek! Več...

3.
X-ray absorption spectroscopy studies of the room-temperature ferromagnetic Fe-doped 6H-BaTiO[sub]3
I. Mikulska, Matjaž Valant, Iztok Arčon, Darja Lisjak, 2015, izvirni znanstveni članek

Najdeno v: osebi
Ključne besede: magnetni polprevodniki, barijev titan, EXAFS
Objavljeno: 16.06.2016; Ogledov: 1962; Prenosov: 60
URL Polno besedilo (0,00 KB)

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Chemical Instability of an Interface between Silver and Bi2Se3 Topological Insulator at Room Temperature
Katja Ferfolja, Matjaž Valant, I. Mikulska, Sandra Gardonio, Mattia Fanetti, 2018, izvirni znanstveni članek

Opis: Understanding an interaction at an interface between a topological insulator and a metal is of critical importance when designing electronic and spintronic devices or when such systems are used in catalysis. In this paper, we report on a chemical instability of the interface between Bi2Se3 and Ag studied by X-ray powder diffraction and electron microscopy. We present strong experimental evidence of a redox solid-state reaction occurring at the interface with kinetics that is significant already at room temperature. The reaction yields Ag2Se, AgBiSe2, and Bi. The unexpected room-temperature chemical instability of the interface should be considered for all future theoretical and applicative studies involving the interface between Bi2Se3 and Ag.
Najdeno v: osebi
Ključne besede: topological insulators, Ag, thin metal films, interfaces, redox reaction
Objavljeno: 17.06.2020; Ogledov: 77; Prenosov: 0
.pdf Polno besedilo (3,93 MB)

6.
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