Repozitorij Univerze v Novi Gorici

Iskanje po repozitoriju
A+ | A- | Pomoč | SLO | ENG

Iskalni niz: išči po
išči po
išči po
išči po
* po starem in bolonjskem študiju

Opcije:
  Ponastavi


51 - 60 / 66
Na začetekNa prejšnjo stran1234567Na naslednjo stranNa konec
51.
Improved photocatalytic activity of anatase-rutile nanocomposites induced by low-temperature sol-gel Sn-modification of TiO2
Ksenija Maver, Iztok Arčon, Urška Lavrenčič Štangar, Mattia Fanetti, Saim Emin, Matjaž Valant, 2020, izvirni znanstveni članek

Opis: The Sn-modified TiO2 photocatalysts are prepared by low-temperature sol-gel processing based on organic titanium and tin precursors with varied Sn concentrations (from 0.1–20 mol .%). The role of Sn dopant as the promotor of the formation of TiO2 rutile crystalline phase is explained and the optimal Sn concentration for preparation of efficient Sn-modified titania photocatalyst is determined. Up to 40 % increase in photocatalytic activity is achieved in Sn-modified TiO2 photocatalytic thin films dried at 150 °C with low Sn concentrations in the range from 0.1 to 1 mol .%. At low Sn concentrations optimal ratio between anatase and rutile (nano)crystals is obtained, which facilitates charge separation at the TiO2 photocatalyst’s surface. When the concentration of Sn increases above 5 mol.% or when the films are calcined at 500 °C, the relative amount of rutile phase with inferior photocatalytic activity, increases and the nanocrystals of titania grow, leading to fewer active sites per unit mass and the reduction of activity in comparison to unmodified TiO2.
Najdeno v: osebi
Ključne besede: Anatase-rutile Sn-modified TiO2 XAS analysis Photocatalytic activity
Objavljeno: 10.02.2020; Ogledov: 1338; Prenosov: 0
.pdf Polno besedilo (537,61 KB)

52.
Chemical Instability of an Interface between Silver and Bi2Se3 Topological Insulator at Room Temperature
Katja Ferfolja, Matjaž Valant, Iuliia Mikulska, Sandra Gardonio, Mattia Fanetti, 2018, izvirni znanstveni članek

Opis: Understanding an interaction at an interface between a topological insulator and a metal is of critical importance when designing electronic and spintronic devices or when such systems are used in catalysis. In this paper, we report on a chemical instability of the interface between Bi2Se3 and Ag studied by X-ray powder diffraction and electron microscopy. We present strong experimental evidence of a redox solid-state reaction occurring at the interface with kinetics that is significant already at room temperature. The reaction yields Ag2Se, AgBiSe2, and Bi. The unexpected room-temperature chemical instability of the interface should be considered for all future theoretical and applicative studies involving the interface between Bi2Se3 and Ag.
Najdeno v: osebi
Ključne besede: topological insulators, Ag, thin metal films, interfaces, redox reaction
Objavljeno: 17.06.2020; Ogledov: 1193; Prenosov: 0
.pdf Polno besedilo (3,93 MB)

53.
54.
55.
56.
Electronic properties of phases in the quasi-binary Bi[sub]2Se[sub]3-Bi[sub]2S[sub]3 system
Zipporah Rini Benher, Sandra Gardonio, Mattia Fanetti, Paolo Moras, Asish K. Kundu, Chiara Bigi, Matjaž Valant, 2021, izvirni znanstveni članek

Opis: We explored the properties of the quasi-binary Bi2Se3–Bi2S3 system over a wide compositional range. X-ray diffraction analysis demonstrates that rhombohedral crystals can be synthesized within the solid solution interval 0–22 mol% Bi2S3, while at 33 mol% Bi2S3 only orthorhombic crystals are obtained. Core level photoemission spectroscopy reveals the presence of Bi3+, Se2− and S2− species and the absence of metallic species, thus indicating that S incorporation into Bi2Se3 proceeds prevalently through the substitution of Se with S. Spin- and angle-resolved photoemission spectroscopy shows that topological surface states develop on the surfaces of the Bi2Se3−ySy (y ≤0.66) rhombohedral crystals, in close analogy with the prototypical case of Bi2Se3, while the orthorhombic crystals with higher S content turn out to be trivial semiconductors. Our results connect unambiguously the phase diagram and electronic properties of the Bi2Se3–Bi2S3 system.
Najdeno v: osebi
Ključne besede: topological insulator, quasi-binary Bi2Se3-Bi2S3 system, electronic properties
Objavljeno: 29.03.2021; Ogledov: 503; Prenosov: 0
.pdf Polno besedilo (4,69 MB)

57.
Structural, morphological and chemical properties of metal/topological insulator interfaces
Katja Ferfolja, 2021, doktorska disertacija

Opis: Topological insulators (TIs) represent a new state of matter that possess a different band structure than regular insulators or conductors. They are characterized with a band gap in the bulk and conductive topological states on the surface, which are spin polarized and robust toward contamination or deformation of the surface. Since the intriguing properties of the TIs are localized at the surface, it is important to obtain knowledge of the possible phenomena happening at the interface between TIs and other materials. This is especially true in the case of metals, due to the fact that such interfaces will be present in the majority of foreseen TI applications. The presented study combines microscopy and spectroscopy techniques for characterization of morphology, stability and chemical interaction at the interface between TI and metals deposited by means of physical vapor deposition. Our research is based on the interface of Bi2Se3 topological insulator with Ag, Ti and Pt – metals that can be encountered in devices or applications predicted to utilize the special properties of topological insulators. STM and SEM imaging of Ag/Bi2Se3 interface showed that Ag atoms arrange on the surface in the form of islands, whereas significantly bigger agglomerates are found at the surface steps. The interface was found to be unstable in time and resulted in the absorption of the metal into the crystal at room temperature. Evidences of a chemical reaction at the Ag/Bi2Se3 interface are presented, showing that new phases (Ag2Se, AgBiSe2 and metallic Bi) are formed. Deposition of Ti on Bi2Se3 resulted in different morphologies depending on the film thickness. At a very low coverage (<1 Å) islands are formed. However, the islands growth is hindered before the completion of a full layer due to the occurrence of a chemical reaction. No surface features could be detected by SEM for Ti coverage up to 20 nm. In contrary, when Ti thickness reached 40 nm, compressive stress triggered buckling of the deposited film. XPS analysis revealed that a redox solid-state reaction occurs at the Ti/Bi2Se3 interface at room temperature forming titanium selenides and metallic Bi. The reaction has significant kinetics even at cryogenic temperature of 130 K. Pt forms a homogenous film over the whole substrate surface, which is stable in time at room temperature. Although the interface of Pt with Bi2Se3 was found to be i less reactive compared to Ag and Ti, an interfacial phase formed upon annealing to ∼90 °C was detected by TEM cross section experiment. A model for prediction of interfacial reactions between a metal and Bi2Se3 based on the standard reduction potential of the metals and Gibbs free energy for a model reaction is presented. Based on these two values the reaction can be expected to result in the formation of binary and/or ternary selenides and Bi. Presented work shows on the importance of metal/topological insulator interfaces characterization taking into account the possibility of a chemical reaction with all of its consequences. Results should be considered for future theoretical and applicative studies involving such interfaces as well as for the possible engineering of 2D TI heterostructures.
Najdeno v: osebi
Ključne besede: topological insulators, topological surface states, Bi2Se3, thin films, Ag, Ti, Pt, morphology, interfaces, solid-state reaction, metal selenides, reactivity, stability, electron microscopy, dissertations
Objavljeno: 09.06.2021; Ogledov: 731; Prenosov: 48
URL Polno besedilo (0,00 KB)
Gradivo ima več datotek! Več...

58.
59.
Improved photocatalytic activity of SnO[sub]2-TiO[sub]2 nanocomposite thin films prepared by low-temperature sol-gel method
Urška Lavrenčič Štangar, Giovanni Palmisano, Matjaž Valant, Mattia Fanetti, Samar Al Jitan, Iztok Arčon, Ksenija Maver, 2021, izvirni znanstveni članek

Opis: The objective of this research was to investigate how the photocatalytic activity of pure TiO2 can be improved by SnO2 modification. Different molar ratios of tin to titanium were prepared. The correlation between tin concentration and structural properties was investigated to explain the mechanism of photocatalytic efficiency and to optimize the synthesis conditions to obtain enhanced activity of the SnO2-modified TiO2 photocatalysts under UV-irradiation. The SnO2-modified TiO2 photocatalysts were prepared by a low-temperature sol-gel method based on organic tin and titanium precursors. The precursors underwent sol-gel reactions separately to form SnO2-TiO2 sol. The sol-gels were deposited on a glass substrate by a dip-coating technique and dried at 150 ◦C to obtain the photocatalysts in the form of a thin film. To test the thermal stability of the material, an additional set of photocatalysts was prepared by calcining the dried samples in air at 500 ◦C. The photocatalytic activity of the samples was determined by measuring the degradation rate of an azo dye. An increase of up to 30% in the photocatalytic activity of the air-dried samples was obtained when the TiO2 was modified with the SnO2 in a concentration range of 0.1–1 mol.%. At higher SnO2 loadings, the photocatalytic activity of the photocatalyst was reduced compared to the unmodified TiO2. The calcined samples showed an overall reduced photocatalytic activity compared to the air-dried samples. Various characterization techniques (UV-Vis, XRD, N2-physisorption, TEM, EDX, SEM, XAS and photoelectrochemical characterization) were used to explain the mechanism for the enhanced and hindered photocatalytic performances of the SnO2-modified TiO2 photocatalysts. The results showed that the nanocrystalline cassiterite SnO2 is attached to the TiO2 nanocrystallites through the Sn-O-Ti bonds. In this way, the coupling of two semiconductors, SnO2 and TiO2, was demonstrated. Compared to single-phase photocatalysts, the coupling of semiconductors has a beneficial effect on the separation of charge carriers, which prolongs their lifetime for accessibility to participate in the redox reactions. The maximum increase in activity of the thin films was achieved in the low concentration range (0.1–1 mol.%), which means that an optimal ratio and contact of the two phases is achieved for the given physical parameters such as particle size, shape and specific surface area of the catalyst.
Najdeno v: osebi
Ključne besede: photocatalytic activity, Sn-modified TiO2, low-temperature, thin films, XAS analysis
Objavljeno: 05.07.2021; Ogledov: 395; Prenosov: 0
.pdf Polno besedilo (5,18 MB)

60.
Room-temperature solid-state reaction at the Ag/Bi[sub]2Se[sub]3 interface
Matjaž Valant, Iuliia Mikulska, Sandra Gardonio, Katja Ferfolja, Mattia Fanetti, 2017, objavljeni povzetek znanstvenega prispevka na konferenci

Opis: Topological insulators (TI) are materials that, while having a forbidden bandgap in bulk, are conductors at their surface due to presence of surface-localized electronic states crossing the band gap. [1] TIs are possible because of a time reversal symmetry and spin-orbit coupling, which invert bulk band states in their energy positions and make the bulk band structure non trivial. Consequently, the topological surface states (TSS) emerge on the surface of these materials. Unlike ordinary surface states, TSS cannot be destroyed by contamination or defects on the surface. Additionally, TSS are also spin polarized, which means that when applying current to TI, the current will have a well defined direction of the electron spins. The topological insulators - a relatively new class of materials - are being widely studied not only from fundamental aspects, but also from their applicative perspectives. It has been predicted that TIs could be used in fields of spintronics, electronics and catalysis. [2,3] Interestingly, only a few studies about metal/TI interfaces have been reported. This is surprising since integration of TI in the applications will often necessitate an interface with the metal, therefore, detailed knowledge on chemistry and electrical conditions at the interface will be required. In this contribution results on research on the chemistry of the Ag/Bi2Se interface will be presented, in particularonthesolid-statereactionbetweennanoparticles.IthasbeenobservedthatwhenBi2Se3 andAgare put in contact a chemical reaction occurs at the interface, producing AgBiSe2 and Ag2Se. Interestingly, the reaction already occurs at room temperature, which is not usual for solid-state reactions. In literature this reaction has not been properly described. The authors rather described it as intercalation of the silver atoms, which we have disproved and showed that recrystallization of the new phases occurs. [3,4,5] The results will alsobediscussedincomparisonwithothertwoAg/Bi2Se3 systemsunderourinvestigation:i)Agdepositedby achemicalrouteonBi2Se3 nanoflakesandii)AgdepositedfromavapourphaseinvacuumonaBi2Se3.single crystal
Najdeno v: osebi
Ključne besede: topological insulators, topological surface states, solid-state reaction, TI/metal interface
Objavljeno: 20.08.2021; Ogledov: 232; Prenosov: 0
.pdf Polno besedilo (1,11 MB)

Iskanje izvedeno v 0 sek.
Na vrh