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2.
Electrical conductivity in 3,4,9,10-perylenetetracarboxylic dianhidride (PTCDA)
Gvido Bratina, Robert Hudej, Marko Zavrtanik, John Nimly Brownell, 2001, izvirni znanstveni članek

Opis: The transient photoresponse in 3,4,9,10-perylenetetracarboxylic dianhydride was examined in metal/organic semiconductor/metal heterostructures. Electron-hole pairs are generated within the structure for fields higher than 5 X 10[sup]4 V/cm as a consequence of the exciton dissociation. The mobility of the electrons perpendicular to the molecular layers increases with the applied electric field and saturates for fields higher than 5 X 10[sup]4 V/cm.
Najdeno v: ključnih besedah
Ključne besede: organic semiconductor, thin films, transient photoconductivity
Objavljeno: 10.07.2015; Ogledov: 2311; Prenosov: 12
URL Polno besedilo (0,00 KB)

3.
THE MORPHOLOGY DEPENDENCE ON GROWTH PARAMETERS IN NANOSTRUCTURED SEMICONDUCTORS
Miha Gunde, 2014, diplomsko delo

Opis: Poly(3-hexylthiophene) (P3HT) is an organic semiconductor material that is widely studied in the photovoltaics and transistor fields of research. The polymer exhibits a relatively high charge carrier mobility when the molecules are ordered in a crystalline way. In this case the material exhibits a fibril-like morphology, which is usually studied by atomic force microscopy (AFM). Previous studies show that blending P3HT with graphene can further improve the charge carrier transport properties of the film. In this experiment, the scanning electron microscope (SEM) has been chosen, due to its practical aspects such as speed of operation and ease of use. Three sets of samples have been analyzed, containing films made of P3HT+graphene blends at different concentrations. The aims of the experiment are: i) to find good conditions for the observation of the morphology features of the film ii) to perform a morphological analysis of the surface of three sets of samples containing both pure P3HT, and P3HT+graphene blend, and possibly to highlight correlation between morpholgy and the charge transport properties. Surface analysis is done by detecting the secondary electron (SE) emission, which is sensitive to topographical features of the surface. Good observation conditions were established by coating the specimen with a thin layer of conductive coating, using a high energy beam (30 keV), and tilting the sample to an angle (30 ◦ ). In two out of three of the analyzed pure P3HT films, the presence of fibrilles indicated a possibly good charge mobility, which has been confirmed by electrical measurements using time-of-flight photoconductivity method (TOF). The presence of graphene has only slightly modified morphology of the film. Features of graphene flakes, which lie flat in the film, have been observed such as flake edges and folds. The flakes are homogeneously dispersed in the film without forming any connected network. TOF measurements have shown an increase in mobility of the charge carriers in the P3HT+graphene film.
Najdeno v: ključnih besedah
Ključne besede: scanning electron microscope, organic semiconductor thin film, P3HT, graphene, morphology
Objavljeno: 01.12.2016; Ogledov: 1876; Prenosov: 22
.pdf Polno besedilo (30,93 MB)

4.
Structure-property relationships of curved aromatic materials from first principles
Layla Martin-Samos, Laura Zoppi, Kim K. Baldridge, 2014, izvirni znanstveni članek

Najdeno v: ključnih besedah
Ključne besede: organic molecules, organic crystals, many-body perturbation theory, optical properties
Objavljeno: 16.06.2016; Ogledov: 880; Prenosov: 32
URL Polno besedilo (0,00 KB)

5.
Vacancy formation on C60/Pt (111)
Sandra Gardonio, Anna L Pinardi, 2014, izvirni znanstveni članek

Najdeno v: ključnih besedah
Ključne besede: fullerenes, spectroscopy, metal organic interfaces
Objavljeno: 09.05.2017; Ogledov: 809; Prenosov: 5
URL Polno besedilo (0,00 KB)

6.
Flexible non-volatile optical memory thin-filmtransistor device with over 256 distinct levelsbased on an organic bicomponent blend
Gvido Bratina, Egon Pavlica, 2016, izvirni znanstveni članek

Opis: Flexible non-volatile optical memory thin-filmtransistor device with over 256 distinct levelsbased on an organic bicomponent blendTim Leydecker1, Martin Herder2, Egon Pavlica3,GvidoBratina3,StefanHecht2*, Emanuele Orgiu1*and Paolo Samorì1*Organic nanomaterials are attracting a great deal of interest for use in flexible electronic applications such as logiccircuits, displays and solar cells. These technologies have already demonstrated good performances, but flexible organicmemories are yet to deliver on all their promise in terms of volatility, operational voltage, write/erase speed, as well asthe number of distinct attainable levels. Here, we report a multilevel non-volatile flexible optical memory thin-filmtransistor based on a blend of a reference polymer semiconductor, namely poly(3-hexylthiophene), and a photochromicdiarylethene, switched with ultraviolet and green light irradiation. A three-terminal device featuring over 256 (8 bitstorage) distinct current levels was fabricated, the memory states of which could be switched with 3 ns laser pulses.We also report robustness over 70 write–erase cycles and non-volatility exceeding 500 days. The device was implementedon a flexible polyethylene terephthalate substrate, validating the concept for integration into wearable electronics andsmart nanodevices.
Najdeno v: ključnih besedah
Ključne besede: organic semiconductors time of flight
Objavljeno: 22.06.2016; Ogledov: 1777; Prenosov: 0
.pdf Polno besedilo (2,78 MB)

7.
The role of local potential minima on charge transport in thin organic semiconductor layers
Egon Pavlica, Raveendra Babu Penumala, Bratina Gvido, 2016, izvirni znanstveni članek

Opis: We have performed a systematic study of dependence of time-resolved photocurrent on the point of charge excitation within the organic semiconductor channel formed by two coplanar metal electrodes. The results confirm that spatial variation of electric field between the electrodes crucially determines transport of photogenerated charge carriers through the organic layer. Time-of-flight measurements of photocurrent demonstrate that the transit time of photogenerated charge carrier packets drifting between the two electrodes decreases with increasing travelling distance. Such counterintuitive result cannot be reconciled with the spatial distribution of electric field between coplanar electrodes, alone. It is also in contrast to expected role of space-charge screening of external electric field. Supported by Monte Carlo simulations of hopping transport in disordered organic semiconductor layer, we submit that the space-charge screens the external electric field and captures slower charge carriers from the photogenerated charge carrier packet. The remaining faster carriers, exhibit velocity distribution with significantly higher mean value and shorter transit time.
Najdeno v: ključnih besedah
Ključne besede: Charge transport, Organic semiconductors, Time of flight, Mobility, Traps
Objavljeno: 23.12.2016; Ogledov: 1734; Prenosov: 0
.pdf Polno besedilo (950,46 KB)

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9.
Fabrication and characterization of ZnO and GaN devices for electronic and photonic applications
Fei Tong, 2014, doktorska disertacija

Opis: The research work presented in this book is based on two direct and wide band gap semiconductors: ZnO and GaN. On the first part of the book, the synthesis of ZnO nanorod array via the low temperature solution growth method was discussed. Due to the high surface-to-volume ratio of ZnO nanorod, to alleviate the some of the drawbacks such as carrier mobility and thickness dilemma of organic solar cells, ZnO nanorod array were integrated into organic solar cells. Power conversion efficiency (η) of 1.8% is achieved in our ZnO nanorods integrated bulk heterojunction organic solar cells on flexible In2O3-PET substrates. On the second part of the book, the fabrication and characterization of Aluminum gallium nitride/gallium nitride high electron mobility transistors (AlGaN/GaN HEMTs) were discussed. Device testing and characterization under both room temperature and high temperature up to 300 °C were performed. The results show that the device can operate even at 300 °C with minimal degradation.
Najdeno v: ključnih besedah
Ključne besede: ZnO nanorod array, organic-inorganic solar cells, AlGaN/GaN HEMTs.
Objavljeno: 25.01.2017; Ogledov: 966; Prenosov: 0
.pdf Polno besedilo (8,57 MB)

10.
Interface-controlled growth of organic semiconductors on graphene
Jinta Mathews, Saim Emin, Egon Pavlica, Matjaž Valant, Gvido Bratina, 2017, izvirni znanstveni članek

Opis: We have studied submonolayer coverages of N,N-1H,1H-perfluorobutyl dicyanoperylenecarboxydiimide (PDIF-CN2) on mechanically exfoliated graphene transferred onto SiO2 substrates. Our atomic force microscopy (AFM) data show that PDIF-CN2 forms irregularly-shaped 1.4 nm-high islands. From the selected area diffraction performed with transmission electron microscope (TEM) we conclude that this height corresponds to π−π stacks of molecules, which are inclined for 43° relative to the graphene surface. AFM also showed complete absence of PDIF-CN2 on single-layer graphene (SLG). Electric force microscopy revealed a marked difference in surface charge density between a single-layer graphene and bilayer graphene, with a higher surface charge on SLG than on the bilayer graphene. We associate this behavior with p− type doping of graphene due to the electrostatic dipole induced by the molecular water layer present at the graphene/SiO2 interface. The crucial role of the graphene/SiO2 interface in determining growth of PDIF-CN2 was further confirmed by TEM examination of PDIF-CN2 deposited onto unsupported SLG.
Najdeno v: ključnih besedah
Ključne besede: afm, organic semiconductors, graphene
Objavljeno: 18.05.2017; Ogledov: 1258; Prenosov: 0
.pdf Polno besedilo (2,02 MB)

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