Repozitorij Univerze v Novi Gorici

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51.
52.
Finite size effects at protein folding from the two-state perspective
Artem Badasyan, Matjaž Valant, Jože Grdadolnik, Vladimir N. Uversky, 2021, objavljeni povzetek znanstvenega prispevka na konferenci

Ključne besede: protein folding, two-state model, finite size effects
Objavljeno v RUNG: 27.09.2021; Ogledov: 1658; Prenosov: 0
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53.
Chemical (in)stability of an interface between metals and Bi[sub]2Se[sub]3 topological insulator
Katja Ferfolja, Mattia Fanetti, Sandra Gardonio, Matjaž Valant, 2019, objavljeni povzetek znanstvenega prispevka na konferenci

Opis: Our research is dedicated to a study of an interface between a Bi2Se3 topological insulator (TI) and various metals due to the essential need for providing a metal contact for devices. The main objective is to characterize structural and chemical properties at the interface, where the electronic properties of the TI can be affected. The structure of the interface and processes happening at it are investigated by microscopy (SEM, TEM, STM) and spectroscopy techniques (EDX, XPS). The research started with the noble metals: Ag, Au and Pt. A good stability was observed for Au and Pt, whereas Ag reacted with Bi2Se3 already at room temperature, producing Ag2Se and AgBiSe2 phase. Interface stability was also checked at high temperature and results showed that the Au coating undergoes a coalescence process starting from 100 °C whereas the interface with Pt does not show any change at least up to 350 °C. At present we are focused on the interface with Ti, a metal which is regularly used as an adhesive layer in electrical contacts. At low coverage (<30 nm) Ti forms an extremely flat film, smoother than Au, Ag or Pt. At higher coverage the film undergoes buckle delamination, likely induced by stress release. The observed morphology indicates that a chemical interaction leads to the growth of the initial smooth Ti epitaxial film. Se interdiffusion and formation of interfacial TixSey phase is envisaged, as suggested from preliminary TEM observations of the interface structure. The presented results show the importance of the processes happening at the interface, especially solid-state chemical reactions, which are often neglected in the study of systems with metal/TI interfaces. Such instability has to be taken into account since the produced phases can affect transport properties of the material, increase a contact resistance or affect functionality of devices.
Ključne besede: Bi2Se3, interface, topological insulator, chemical instability
Objavljeno v RUNG: 20.08.2021; Ogledov: 1787; Prenosov: 10
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54.
Chemical (in)stability of interfaces between different metals and Bi[sub]2Se[sub]3 topological insulator
Katja Ferfolja, Mattia Fanetti, Sandra Gardonio, Matjaž Valant, 2018, objavljeni povzetek znanstvenega prispevka na konferenci

Opis: In recent years a classification of materials based on their topological order gained popularity due to the discovery of materials with special topological character – topological insulators (TI). TI have different band structure than regular insulators or conductors. They are characterized by a band gap in the bulk of the material, but at the surface they possess conductive topological surface states (TSS) that cross the Fermi level. TSS are a consequence of the non-trivial bulk band structure and have properties that differ from ordinary surface states. They are robust toward contamination and deformation of the surface. Additionally, they are also spin polarized, which means that an electron spin is locked to a crystal momentum and, therefore, backscattering during transport is suppressed [1]. Due to their specific properties the TI could be used in fields of spintronics, quantum computing and catalysis [2]. The investigation of the interfaces between metals and the TI has not been given much attention even though its characterization is interesting from fundamental physics and applicative point of view. (In)stability of the contacts with metal electrodes, in a form of a chemical reaction or diffusion, has to be taken into account since it can affect the transport properties of the material or increase the contact resistance. Our research is dedicated to the study of the metal/TI interfaces, in particular to Bi2Se3 with deposited metals that are relevant for electrical contacts (Au, Ag, Pt, Cr, Ti). The thermal and chemical stability of the interfaces are of fundamental importance for understanding the contact behavior, therefore, we focused our work to the characterization of these properties. The metal/TI interfaces are investigated mainly with an electron microscopy (SEM, TEM, STM), EDX microanalysis and XRD. Our previous studies showed that the interface between Bi2Se3, and Ag deposited either chemically or from a vapor phase, results in the formation of new phases already at room temperature [3]. On the contrary, Au deposited on the Bi2Se3 surface shows very limited reactivity and is stable at RT, but diffusion and coalescence of the metal are observed starting from 100 °C [4]. In this contribution, we will present further characterization on the evolution of the Ag/Bi2Se3 and Au/Bi2Se3 interfaces, show preliminary results about recently investigated systems (Pt/Bi2Se3, Ti/Bi2Se3) and compare the thermal and chemical stability of the systems under investigation.
Ključne besede: thermal lens spectrometry, photothermal beam deflection spectroscopy, dye remediation, photothermal technique, photocatalytic degradation, reactive blue 19, TiO2 modification
Objavljeno v RUNG: 20.08.2021; Ogledov: 2156; Prenosov: 0
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55.
Room-temperature solid-state reaction at the Ag/Bi[sub]2Se[sub]3 interface
Katja Ferfolja, Mattia Fanetti, Iuliia Mikulska, Sandra Gardonio, Matjaž Valant, 2017, objavljeni povzetek znanstvenega prispevka na konferenci

Opis: Topological insulators (TI) are materials that, while having a forbidden bandgap in bulk, are conductors at their surface due to presence of surface-localized electronic states crossing the band gap. [1] TIs are possible because of a time reversal symmetry and spin-orbit coupling, which invert bulk band states in their energy positions and make the bulk band structure non trivial. Consequently, the topological surface states (TSS) emerge on the surface of these materials. Unlike ordinary surface states, TSS cannot be destroyed by contamination or defects on the surface. Additionally, TSS are also spin polarized, which means that when applying current to TI, the current will have a well defined direction of the electron spins. The topological insulators - a relatively new class of materials - are being widely studied not only from fundamental aspects, but also from their applicative perspectives. It has been predicted that TIs could be used in fields of spintronics, electronics and catalysis. [2,3] Interestingly, only a few studies about metal/TI interfaces have been reported. This is surprising since integration of TI in the applications will often necessitate an interface with the metal, therefore, detailed knowledge on chemistry and electrical conditions at the interface will be required. In this contribution results on research on the chemistry of the Ag/Bi2Se interface will be presented, in particularonthesolid-statereactionbetweennanoparticles.IthasbeenobservedthatwhenBi2Se3 andAgare put in contact a chemical reaction occurs at the interface, producing AgBiSe2 and Ag2Se. Interestingly, the reaction already occurs at room temperature, which is not usual for solid-state reactions. In literature this reaction has not been properly described. The authors rather described it as intercalation of the silver atoms, which we have disproved and showed that recrystallization of the new phases occurs. [3,4,5] The results will alsobediscussedincomparisonwithothertwoAg/Bi2Se3 systemsunderourinvestigation:i)Agdepositedby achemicalrouteonBi2Se3 nanoflakesandii)AgdepositedfromavapourphaseinvacuumonaBi2Se3.single crystal
Ključne besede: topological insulators, topological surface states, solid-state reaction, TI/metal interface
Objavljeno v RUNG: 20.08.2021; Ogledov: 1947; Prenosov: 0
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56.
Influence of exposed facets, morphology and hetero-interfaces of BiVO4 on photocatalytic water oxidation: A review
Matjaž Valant, Akansha Mehta, 2021, pregledni znanstveni članek

Ključne besede: fotokatalizator, kristalna struktura, morfologija
Objavljeno v RUNG: 12.08.2021; Ogledov: 1568; Prenosov: 0
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57.
Improved photocatalytic activity of SnO[sub]2-TiO[sub]2 nanocomposite thin films prepared by low-temperature sol-gel method
Ksenija Maver, Iztok Arčon, Mattia Fanetti, Samar Al Jitan, Giovanni Palmisano, Matjaž Valant, Urška Lavrenčič Štangar, 2021, izvirni znanstveni članek

Opis: The objective of this research was to investigate how the photocatalytic activity of pure TiO2 can be improved by SnO2 modification. Different molar ratios of tin to titanium were prepared. The correlation between tin concentration and structural properties was investigated to explain the mechanism of photocatalytic efficiency and to optimize the synthesis conditions to obtain enhanced activity of the SnO2-modified TiO2 photocatalysts under UV-irradiation. The SnO2-modified TiO2 photocatalysts were prepared by a low-temperature sol-gel method based on organic tin and titanium precursors. The precursors underwent sol-gel reactions separately to form SnO2-TiO2 sol. The sol-gels were deposited on a glass substrate by a dip-coating technique and dried at 150 ◦C to obtain the photocatalysts in the form of a thin film. To test the thermal stability of the material, an additional set of photocatalysts was prepared by calcining the dried samples in air at 500 ◦C. The photocatalytic activity of the samples was determined by measuring the degradation rate of an azo dye. An increase of up to 30% in the photocatalytic activity of the air-dried samples was obtained when the TiO2 was modified with the SnO2 in a concentration range of 0.1–1 mol.%. At higher SnO2 loadings, the photocatalytic activity of the photocatalyst was reduced compared to the unmodified TiO2. The calcined samples showed an overall reduced photocatalytic activity compared to the air-dried samples. Various characterization techniques (UV-Vis, XRD, N2-physisorption, TEM, EDX, SEM, XAS and photoelectrochemical characterization) were used to explain the mechanism for the enhanced and hindered photocatalytic performances of the SnO2-modified TiO2 photocatalysts. The results showed that the nanocrystalline cassiterite SnO2 is attached to the TiO2 nanocrystallites through the Sn-O-Ti bonds. In this way, the coupling of two semiconductors, SnO2 and TiO2, was demonstrated. Compared to single-phase photocatalysts, the coupling of semiconductors has a beneficial effect on the separation of charge carriers, which prolongs their lifetime for accessibility to participate in the redox reactions. The maximum increase in activity of the thin films was achieved in the low concentration range (0.1–1 mol.%), which means that an optimal ratio and contact of the two phases is achieved for the given physical parameters such as particle size, shape and specific surface area of the catalyst.
Ključne besede: photocatalytic activity, Sn-modified TiO2, low-temperature, thin films, XAS analysis
Objavljeno v RUNG: 05.07.2021; Ogledov: 2329; Prenosov: 0
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58.
Analiza odrezanih površin polimernih izdelkov za podjetje BIA Separations
Matjaž Valant, Mojca Vrčon, 2021, končno poročilo o rezultatih raziskav

Ključne besede: odrezki, morfologija, defekti, delovna poročila
Objavljeno v RUNG: 26.05.2021; Ogledov: 1676; Prenosov: 0
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