| Naslov: | Effect of gamma irradiation on Schottky-contacted vertically aligned ZnO nanorod-based hydrogen sensor |
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| Avtorji: | ID Ranwa, Sapana, Department of Electrical Engineering, Indian Institute of Technology Jodhpur, Jodhpur-342011, India (Avtor)
ID Barala, Surendra Singh, Department of Electrical Engineering, Indian Institute of Technology Jodhpur, Jodhpur-342011, India and Defence Laboratory, Jodhpur 342011, India (Avtor)
ID Fanetti, Mattia, Materials Research Laboratory, University of Nova Gorica, Vipavska 11c SI-5270 Ajdovšcina, Slovenia (Avtor)
ID Kumar, Mahesh, Department of Electrical Engineering, Indian Institute of Technology Jodhpur, Jodhpur-342011, India (Avtor) |
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| Datoteke: |
Gradivo nima datotek, ki so prostodostopne za javnost. Gradivo je morda fizično dosegljivo v knjižnici fakultete, zalogo lahko preverite v COBISS-u.  |
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| Jezik: | Angleški jezik |
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| Vrsta gradiva: | Delo ni kategorizirano |
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| Tipologija: | 1.01 - Izvirni znanstveni članek |
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| Organizacija: | UNG - Univerza v Novi Gorici
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| Opis: | We report the impact of gamma irradiation on the performance of a gold Schottky-contacted ZnO nanorod-based hydrogen sensor. RF-sputtered vertically aligned highly c-axis-oriented ZnO NRs were grown on Si(100) substrate. X-ray diffraction shows no significant change in crystal structure at low gamma doses from 1 to 5 kGy. As gamma irradiation doses increase to 10 kGy, the single crystalline ZnO structure converts to polycrystalline. The photoluminescence spectra also shows suppression of the near-band emission peak and the huge wide-band spectrum indicates the generation of structural defects at high gamma doses. At 1 kGy, the hydrogen sensor response was enhanced from 67% to 77% for 1% hydrogen in pure argon at a 150 °C operating temperature. However, at 10 kGy, the relative response decreases to 33.5%. High gamma irradiation causes displacement damage and defects in ZnO NRs, and as a result, degrades the sensor's performance as a result. Low gamma irradiation doses activate the ZnO NR surface through ionization, which enhances the sensor performance. The relative response of the hydrogen sensor was enhanced by ∼14.9% with respect to pristine ZnO using 1 kGy gamma ray treatment. © 2016 IOP Publishing Ltd. |
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| Ključne besede: | ZnO, nanorods, gamma irradiation, sensor |
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| Leto izida: | 2016 |
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| Št. strani: | 8 |
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| Številčenje: | 345502, 27 |
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| PID: | 20.500.12556/RUNG-2888-dcaf5e62-7dd1-f27c-a193-23b65dfc2acc |
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| COBISS.SI-ID: | 4632571 |
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| DOI: | 10.1088/0957-4484/27/34/345502 |
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| NUK URN: | URN:SI:UNG:REP:5SNVQ2MG |
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| Datum objave v RUNG: | 12.01.2017 |
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| Število ogledov: | 5160 |
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| Število prenosov: | 0 |
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| Metapodatki: |    |
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