Naslov: | Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate |
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Avtorji: | ID Wang, Yaqi, Department of Physics, Auburn University, Auburn, AL 36849, USA (Avtor) ID Alur, Siddharth, Department of Physics, Auburn University, Auburn, AL 36849, USA (Avtor) ID Sharma, Yogesh, Department of Physics, Auburn University, Auburn, AL 36849, USA (Avtor) ID Tong, Fei, Department of Physics, Auburn University, Auburn, AL 36849, USA (Avtor) ID Thapa, Resham, Department of Physics, Auburn University, Auburn, AL 36849, USA (Avtor) ID Gartland, Patrick, Department of Physics, Auburn University, Auburn, AL 36849, USA (Avtor) ID Issacs-Smith, Tamara, Department of Physics, Auburn University, Auburn, AL 36849, USA (Avtor) ID Ahyi, Claude, Department of Physics, Auburn University, Auburn, AL 36849, USA (Avtor) ID Williams, John, Department of Physics, Auburn University, Auburn, AL 36849, USA (Avtor) ID Park, Minseo, Department of Physics, Auburn University, Auburn, AL 36849, USA (Avtor) ID Johnson, Mark, Department of Physics, Auburn University, Auburn, AL 36849, USA (Avtor) ID Paskova, Tanya, Department of Physics, Auburn University, Auburn, AL 36849, USA (Avtor) ID Preble, Edward A, Department of Physics, Auburn University, Auburn, AL 36849, USA (Avtor) ID Evans, Keith, Department of Physics, Auburn University, Auburn, AL 36849, USA (Avtor) |
Datoteke: |
Gradivo nima datotek, ki so prostodostopne za javnost. Gradivo je morda fizično dosegljivo v knjižnici fakultete, zalogo lahko preverite v COBISS-u.  |
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Jezik: | Angleški jezik |
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Vrsta gradiva: | Delo ni kategorizirano |
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Tipologija: | 1.01 - Izvirni znanstveni članek |
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Organizacija: | UNG - Univerza v Novi Gorici
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Ključne besede: | free-standing GaN substrate, Ultra-low leakage and high breakdown Schottky diodes |
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Leto izida: | 2011 |
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Št. strani: | 4 |
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Številčenje: | 1, 26 |
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PID: | 20.500.12556/RUNG-2896-756283ec-cf5b-a33a-3552-fbc536a4a866  |
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COBISS.SI-ID: | 4635131  |
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DOI: | http://dx.doi.org/10.1088/0268-1242/26/2/022002  |
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NUK URN: | URN:SI:UNG:REP:6SGICGTC |
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Datum objave v RUNG: | 16.01.2017 |
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Število ogledov: | 5457 |
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Število prenosov: | 0 |
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Metapodatki: |  |
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WANG, Yaqi, ALUR, Siddharth, SHARMA, Yogesh, TONG, Fei, THAPA, Resham, GARTLAND, Patrick, ISSACS-SMITH, Tamara, AHYI, Claude, WILLIAMS, John, PARK, Minseo, JOHNSON, Mark, PASKOVA, Tanya, PREBLE, Edward A in EVANS, Keith, 2011, Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate. Semiconductor Science and Technology [na spletu]. 2011. Vol. 1, no. 26. [Dostopano 15 april 2025]. DOI http://dx.doi.org/10.1088/0268-1242/26/2/022002. Pridobljeno s: https://repozitorij.ung.si/IzpisGradiva.php?lang=slv&id=2896
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