Repository of University of Nova Gorica

Show document
A+ | A- | SLO | ENG

Title:Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate
Authors:Wang, Yaqi (Author)
Alur, Siddharth (Author)
Sharma, Yogesh (Author)
Tong, Fei (Author)
Thapa, Resham (Author)
Gartland, Patrick (Author)
Issacs-Smith, Tamara (Author)
Ahyi, Claude (Author)
Williams, John (Author)
Park, Minseo (Author)
Johnson, Mark (Author)
Paskova, Tanya (Author)
Preble, Edward A (Author)
Evans, Keith (Author)
Files:This document has no files. This document may have a phisical copy in the library of the organization, check the status via COBISS. Link is opened in a new window
Language:English
Work type:Not categorized (r6)
Tipology:1.01 - Original Scientific Article
Organization:UNG - University of Nova Gorica
Keywords:free-standing GaN substrate, Ultra-low leakage and high breakdown Schottky diodes
Year of publishing:2011
Number of pages:4
Numbering:26, 1
COBISS_ID:4635131 Link is opened in a new window
URN:URN:SI:UNG:REP:6SGICGTC
DOI:http://dx.doi.org/10.1088/0268-1242/26/2/022002 Link is opened in a new window
Views:3011
Downloads:0
Metadata:XML RDF-CHPDL DC-XML DC-RDF
Categories:Document is not linked to any category.
:
  
Average score:(0 votes)
Your score:Voting is allowed only for logged in users.

Hover the mouse pointer over a document title to show the abstract or click on the title to get all document metadata.

Record is a part of a journal

Title:Semiconductor Science and Technology
Publisher:IOP Publishing: Hybrid Open Access
ISSN:0268-1242
Year of publishing:2011

Back