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Title:Fabrication and characterization of ZnO and GaN devices for electronic and photonic applications
Authors:Tong, Fei (Author)
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Language:English
Work type:Not categorized (r6)
Tipology:2.08 - Doctoral Dissertation
Organization:UNG - University of Nova Gorica
Abstract:The research work presented in this book is based on two direct and wide band gap semiconductors: ZnO and GaN. On the first part of the book, the synthesis of ZnO nanorod array via the low temperature solution growth method was discussed. Due to the high surface-to-volume ratio of ZnO nanorod, to alleviate the some of the drawbacks such as carrier mobility and thickness dilemma of organic solar cells, ZnO nanorod array were integrated into organic solar cells. Power conversion efficiency (η) of 1.8% is achieved in our ZnO nanorods integrated bulk heterojunction organic solar cells on flexible In2O3-PET substrates. On the second part of the book, the fabrication and characterization of Aluminum gallium nitride/gallium nitride high electron mobility transistors (AlGaN/GaN HEMTs) were discussed. Device testing and characterization under both room temperature and high temperature up to 300 °C were performed. The results show that the device can operate even at 300 °C with minimal degradation.
Keywords:ZnO nanorod array, organic-inorganic solar cells, AlGaN/GaN HEMTs.
Year of publishing:2014
Publisher:LAP LAMBERT Academic Publishing
Number of pages:160
COBISS_ID:4647931 Link is opened in a new window
ISBN:978-3-659-55092-8
URN:URN:SI:UNG:REP:LDYCLNTA
Views:1673
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