Repozitorij Univerze v Novi Gorici

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Naslov:Fabrication and characterization of ZnO and GaN devices for electronic and photonic applications
Avtorji:Tong, Fei (Avtor)
Datoteke:Gradivo nima datotek. Gradivo je morda fizično dosegljivo v knjižnici fakultete, zalogo lahko preverite v COBISS-u. Povezava se odpre v novem oknu
Jezik:Angleški jezik
Vrsta gradiva:Delo ni kategorizirano (r6)
Tipologija:2.08 - Doktorska disertacija
Organizacija:UNG - Univerza v Novi Gorici
Opis:The research work presented in this book is based on two direct and wide band gap semiconductors: ZnO and GaN. On the first part of the book, the synthesis of ZnO nanorod array via the low temperature solution growth method was discussed. Due to the high surface-to-volume ratio of ZnO nanorod, to alleviate the some of the drawbacks such as carrier mobility and thickness dilemma of organic solar cells, ZnO nanorod array were integrated into organic solar cells. Power conversion efficiency (η) of 1.8% is achieved in our ZnO nanorods integrated bulk heterojunction organic solar cells on flexible In2O3-PET substrates. On the second part of the book, the fabrication and characterization of Aluminum gallium nitride/gallium nitride high electron mobility transistors (AlGaN/GaN HEMTs) were discussed. Device testing and characterization under both room temperature and high temperature up to 300 °C were performed. The results show that the device can operate even at 300 °C with minimal degradation.
Ključne besede:ZnO nanorod array, organic-inorganic solar cells, AlGaN/GaN HEMTs.
Leto izida:2014
Založnik:LAP LAMBERT Academic Publishing
Št. strani:160
COBISS_ID:4647931 Povezava se odpre v novem oknu
ISBN:978-3-659-55092-8
URN:URN:SI:UNG:REP:LDYCLNTA
Število ogledov:1775
Število prenosov:0
Metapodatki:XML RDF-CHPDL DC-XML DC-RDF
Področja:Gradivo ni uvrščeno v področja.
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Skupna ocena:(0 glasov)
Vaša ocena:Ocenjevanje je dovoljeno samo prijavljenim uporabnikom.

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