| Naslov: | Role of transport band edge variation on delocalized charge transport in high-mobility crystalline organic semiconductors |
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| Avtorji: | ID Bratina, Gvido (Avtor)
ID Kadashchuk, Andrey (Avtor)
ID Pavlica, Egon (Avtor)
ID Tong, Fei (Avtor), et al. |
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| Datoteke: |
Gradivo nima datotek, ki so prostodostopne za javnost. Gradivo je morda fizično dosegljivo v knjižnici fakultete, zalogo lahko preverite v COBISS-u.  |
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| Jezik: | Angleški jezik |
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| Vrsta gradiva: | Delo ni kategorizirano |
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| Tipologija: | 1.01 - Izvirni znanstveni članek |
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| Organizacija: | UNG - Univerza v Novi Gorici
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| Opis: | We demonstrate that the degree of charge delocalization has a strong impact on polarization energy and thereby on the position of the transport band edge in organic semiconductors. This gives rise to long-range potential fluctuations, which govern the electronic transport through delocalized states in organic crystalline layers. This concept is employed to formulate an analytic model that explains a negative field dependence coupled with a positive temperature dependence of the charge mobility observed by a lateral time-of-flight technique in a high-mobility crystalline organic layer. This has important implications for the further understanding of the charge transport via delocalized states in organic semiconductors. |
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| Ključne besede: | organic semiconducotrs, time of flight, transport |
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| Leto izida: | 2017 |
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| Št. strani: | 125202-125208 |
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| Številčenje: | 96 |
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| PID: | 20.500.12556/RUNG-3266-e600200a-e2ff-503d-9ece-1c63337c4a98 |
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| COBISS.SI-ID: | 4915195 |
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| NUK URN: | URN:SI:UNG:REP:BN4JDYR5 |
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| Datum objave v RUNG: | 13.09.2017 |
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| Število ogledov: | 5094 |
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| Število prenosov: | 0 |
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| Metapodatki: |    |
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