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Title:Role of transport band edge variation on delocalized charge transport in high-mobility crystalline organic semiconductors
Authors:Bratina, Gvido (Author)
Kadashchuk, Andrey (Author)
Pavlica, Egon (Author)
Tong, Fei (Author)
et al.
Files:This document has no files. This document may have a phisical copy in the library of the organization, check the status via COBISS. Link is opened in a new window
Language:English
Work type:Not categorized (r6)
Tipology:1.01 - Original Scientific Article
Organization:UNG - University of Nova Gorica
Abstract:We demonstrate that the degree of charge delocalization has a strong impact on polarization energy and thereby on the position of the transport band edge in organic semiconductors. This gives rise to long-range potential fluctuations, which govern the electronic transport through delocalized states in organic crystalline layers. This concept is employed to formulate an analytic model that explains a negative field dependence coupled with a positive temperature dependence of the charge mobility observed by a lateral time-of-flight technique in a high-mobility crystalline organic layer. This has important implications for the further understanding of the charge transport via delocalized states in organic semiconductors.
Keywords:organic semiconducotrs, time of flight, transport
Year of publishing:2017
Number of pages:125202-125208
Numbering:96
COBISS_ID:4915195  Link is opened in a new window
License:CC BY-NC-ND 4.0
This work is available under this license: Creative Commons Attribution Non-Commercial No Derivatives 4.0 International
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Record is a part of a journal

Title:Physical Review B
Shortened title:Phys. Rev. B
Year of publishing:2017

Document is financed by a project

Funder:ARRS - Agencija za raziskovalno dejavnost Republike Slovenije (ARRS)
Funding Programme:Raziskovalni projekti - temeljni
Project no.:N1-0024
Name:
Acronym:
Project ID:info:eu-repo/grantAgreement/ARRS/Raziskovalni%20projekti%20-%20temeljni/N1-0024

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