Flexible non-volatile optical memory thin-filmtransistor device with over 256 distinct levelsbased on an organic bicomponent blend
Flexible non-volatile optical memory thin-filmtransistor device with over 256 distinct levelsbased on an organic bicomponent blendTim Leydecker1, Martin Herder2, Egon Pavlica3,GvidoBratina3,StefanHecht2*, Emanuele Orgiu1*and Paolo Samorì1*Organic nanomaterials are attracting a great deal of interest for use in flexible electronic applications such as logiccircuits, displays and solar cells. These technologies have already demonstrated good performances, but flexible organicmemories are yet to deliver on all their promise in terms of volatility, operational voltage, write/erase speed, as well asthe number of distinct attainable levels. Here, we report a multilevel non-volatile flexible optical memory thin-filmtransistor based on a blend of a reference polymer semiconductor, namely poly(3-hexylthiophene), and a photochromicdiarylethene, switched with ultraviolet and green light irradiation. A three-terminal device featuring over 256 (8 bitstorage) distinct current levels was fabricated, the memory states of which could be switched with 3 ns laser pulses.We also report robustness over 70 write–erase cycles and non-volatility exceeding 500 days. The device was implementedon a flexible polyethylene terephthalate substrate, validating the concept for integration into wearable electronics andsmart nanodevices.
2016
2016-06-21 16:19:13
1033
r6
Gvido
Bratina
70
Egon
Pavlica
70
COBISS_ID
3
4405243
DOI
15
10.1038/NNANO.2016.87
NUK URN
18
URN:SI:UNG:REP:QVGWN6JM
RAZ_Bratina_Gvido_i2016.pdf
2913806
Predstavitvena datoteka
2016-06-22 10:52:24