20.500.12556/RUNG-3066-89df4357-1f14-2588-2b6f-15a29aebc806
Self-amplified photo-induced gap quenching in a correlated electron material
Capturing the dynamic electronic band structure of a correlated material presents a powerful capability for uncovering the complex couplings between the electronic and structural degrees of freedom. When combined with ultrafast laser excitation, new phases of matter can result, since far-from-equilibrium excited states are instantaneously populated. Here, we elucidate a general relation between ultrafast non-equilibrium electron dynamics and the size of the characteristic energy gap in a correlated electron material. We show that carrier multiplication via impact ionization can be one of the most important processes in a gapped material, and that the speed of carrier multiplication critically depends on the size of the energy gap. In the case of the charge-density wave material 1T-TiSe 2 , our data indicate that carrier multiplication and gap dynamics mutually amplify each other, which explains—on a microscopic level—the extremely fast response of this material to ultrafast optical excitation.
Self-amplified photo-induced gap quenching in a correlated electron material. Available from: https://www.researchgate.net/publication/308804379_Self-amplified_photo-induced_gap_quenching_in_a_correlated_electron_material [accessed Apr 20, 2017].
high harmonic generation
charge-density wave material
1T-TiSe2
non-equilibrium electron dynamics
ultrafast surface science
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Angleški jezik
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2017-04-20 11:59:54
2017-04-20 14:07:47
2023-06-09 03:20:15
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2016
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4770043
DOI: 10.1038/ncomms12902
URN:SI:UNG:REP:0QU6HIQH
Univerza v Novi Gorici
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