20.500.12556/RUNG-3089-af6e5781-f85a-bb71-572d-afe42bca54c6
Interface-controlled growth of organic semiconductors on graphene
We have studied submonolayer coverages of N,N-1H,1H-perfluorobutyl dicyanoperylenecarboxydiimide (PDIF-CN2) on mechanically exfoliated graphene transferred onto SiO2 substrates. Our atomic force microscopy (AFM) data show that PDIF-CN2 forms irregularly-shaped 1.4 nm-high islands. From the selected area diffraction performed with transmission electron microscope (TEM) we conclude that this height corresponds to π−π
stacks of molecules, which are inclined for 43° relative to the graphene surface. AFM also showed complete absence of PDIF-CN2 on single-layer graphene (SLG). Electric force microscopy revealed a marked difference in surface charge density between a single-layer graphene and bilayer graphene, with a higher surface charge on SLG than on the bilayer graphene. We associate this behavior with p−
type doping of graphene due to the electrostatic dipole induced by the molecular water layer present at the graphene/SiO2 interface. The crucial role of the graphene/SiO2 interface in determining growth of PDIF-CN2 was further confirmed by TEM examination of PDIF-CN2 deposited onto unsupported SLG.
afm
organic semiconductors
graphene
true
true
false
Angleški jezik
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2017-05-18 02:18:18
2017-05-18 06:05:42
2023-06-09 03:20:24
0000-00-00 00:00:00
2017
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16
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2017
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Zaloznikova
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NiDoloceno
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4780795
10.1016/j.susc.2017.05.005
URN:SI:UNG:REP:4QEVHK2P
Univerza v Novi Gorici
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1
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