CVD Growth of Molybdenum Diselenide Surface Structures with Tailored Morphology
Controllable atmospheric pressure CVD has been optimized to grow transition metal dichalcogenide MoSe2 with tunable morphology at 750 °C on a silicon substrate with a native oxide layer of 250 nm. Utilizing tetrapotassium perylene-3,4,9,10-tetracarboxylate (PTAS) as a seed promoter and varying the vertical distance between the substrate and the precursor MoO3, different morphologies of MoSe2 were achieved, including 2D triangles, hexagons, 3D pyramids and vertically aligned MoSe2 sheets. We find that the shape of MoSe2 is highly dependent upon the distance h between the substrate and the precursor. The change in the morphology is attributed to the confinement of vapor (MoO3 and Se) precursors and their concentrations due to the change in h. These results are helpful in improving our understanding about the factors which influence the morphology (shape evolution) and also the continuous growth of MoSe2 films.
2018
2018-08-20 12:44:58
1033
Transition metal dichalcogenides, 2D materials, Seed promotor, Chemical vapor deposition, Molybdenum diselenide
r6
M. Naeem
Sial
70
Usman
Muhammad
70
Binjie
Zheng
70
Yanan
Yu
70
Andraž
Mavrič
70
Fangzhu
Qing
70
Matjaž
Valant
70
Zhiming M.
Wang
70
COBISS_ID
3
5190139
DOI
15
10.1039/C8CE00917A
NUK URN
18
URN:SI:UNG:REP:YHCIHRZQ
06_CrystEngComm_CVD_Growth_of_Molybdenum_Diselenide_Surface_Structures_with_Tailored_Morphology.pdf
2809077
Predstavitvena datoteka
2018-08-20 12:45:14
0
Izvorni URL
2018-08-20 12:44:59