20.500.12556/RUNG-7681
Plasma-enhanced atomic layer deposition of amorphous Ga2O3 for solar-blind photodetection
Wide-bandgap gallium oxide (Ga2O3) is one of the most promising semiconductor materials for solar-blind (200 nm–280 nm) photodetection. In its amorphous form, a-Ga2O3 maintains its intrinsic optoelectronic properties while can be prepared at a low growth temperature, thus is compatible with Si integrated circuits (ICs) technology. Herein, the a-Ga2O3 film is directly deposited on pre-fabricated Au interdigital electrodes by plasma enhanced atomic layer deposition (PE-ALD) at a growth temperature of 250 °C. The stoichiometric a-Ga2O3 thin film with a low defect density is achieved owing to the mild PE-ALD condition. As a result, the fabricated Au/a-Ga2O3/Au photodetector shows a fast time response, high responsivity, and excellent wavelength selectivity for solar-blind photodetection. Furthermore, an ultra-thin MgO layer is deposited by PE-ALD to passivate the Au/a-Ga2O3/Au interface, resulting in the responsivity of 788 A/W (under 254 nm at 10 V), a 250-nm-to-400-nm rejection ratio of 9.2×103, and the rise time and the decay time of 32 ms and 6 ms, respectively. These results demonstrate that the a-Ga2O3 film grown by PE-ALD is a promising candidate for high-performance solar-blind photodetection and potentially can be integrated with Si ICs for commercial production.
Amorphous gallium oxide
Passivation layer
Plasma enhanced atomic layer deposition
Responsivity
Solar-blind photodetector
true
true
false
Angleški jezik
Ni določen
Delo ni kategorizirano
2022-10-24 22:14:17
2022-10-25 09:04:32
2023-06-10 03:02:23
0000-00-00 00:00:00
2022
0
0
100176-100176
2022
2022
0000-00-00
Zaloznikova
NiDoloceno
NiDoloceno
0000-00-00
0000-00-00
0000-00-00
126949891
10.1016/j.jnlest.2022.100176
URN:SI:UNG:REP:FSWGDR60
Univerza v Novi Gorici
0
1
0