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Plasma-enhanced atomic layer deposition of amorphous Ga2O3 for solar-blind photodetection
Ze-Yu Fan, Min-Ji Yang, Bo-Yu Fan, Andraž Mavrič, Nadiia Pastukhova, Matjaž Valant, Bo-Lin Li, Kuang Feng, Dong-Liang Liu, Guang-Wei Deng, Qiang Zhou, Yan-Bo Li, 2022, original scientific article

Abstract: Wide-bandgap gallium oxide (Ga2O3) is one of the most promising semiconductor materials for solar-blind (200 nm–280 nm) photodetection. In its amorphous form, a-Ga2O3 maintains its intrinsic optoelectronic properties while can be prepared at a low growth temperature, thus is compatible with Si integrated circuits (ICs) technology. Herein, the a-Ga2O3 film is directly deposited on pre-fabricated Au interdigital electrodes by plasma enhanced atomic layer deposition (PE-ALD) at a growth temperature of 250 °C. The stoichiometric a-Ga2O3 thin film with a low defect density is achieved owing to the mild PE-ALD condition. As a result, the fabricated Au/a-Ga2O3/Au photodetector shows a fast time response, high responsivity, and excellent wavelength selectivity for solar-blind photodetection. Furthermore, an ultra-thin MgO layer is deposited by PE-ALD to passivate the Au/a-Ga2O3/Au interface, resulting in the responsivity of 788 A/W (under 254 nm at 10 V), a 250-nm-to-400-nm rejection ratio of 9.2×103, and the rise time and the decay time of 32 ms and 6 ms, respectively. These results demonstrate that the a-Ga2O3 film grown by PE-ALD is a promising candidate for high-performance solar-blind photodetection and potentially can be integrated with Si ICs for commercial production.
Keywords: Amorphous gallium oxide, Passivation layer, Plasma enhanced atomic layer deposition, Responsivity, Solar-blind photodetector
Published in RUNG: 25.10.2022; Views: 630; Downloads: 0
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