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The interface between Pt and ▫$Bi_2Se_3$▫ : instability and formation of a new ordered phase
Mattia Fanetti, Katja Ferfolja, Sandra Gardonio, Matjaž Valant, 2024, original scientific article

Keywords: topological insulator, platinum, interface, thin film, TEM, intermetallic
Published in RUNG: 28.01.2025; Views: 746; Downloads: 5
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Explotation of Localized Surface Plasmon Resonance for Detection of nanoparticle's topological surface states
Blaž Belec, Mattia Fanetti, Sandra Gardonio, Matjaž Valant, 2022, published scientific conference contribution abstract

Keywords: topological insulator, bismuth selenide
Published in RUNG: 27.09.2022; Views: 2630; Downloads: 0
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Optical response of plasmonic Bi2Se3 topological insulator nanoplatelets investigated by cathodoluminescence microscopy
Blaž Belec, Mattia Fanetti, 2022, published scientific conference contribution abstract

Keywords: microscopy, cathodoluminescence, topological insulator
Published in RUNG: 02.06.2022; Views: 2701; Downloads: 0
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Chemical (in)stability of an interface between metals and Bi[sub]2Se[sub]3 topological insulator
Katja Ferfolja, Mattia Fanetti, Sandra Gardonio, Matjaž Valant, 2019, published scientific conference contribution abstract

Abstract: Our research is dedicated to a study of an interface between a Bi2Se3 topological insulator (TI) and various metals due to the essential need for providing a metal contact for devices. The main objective is to characterize structural and chemical properties at the interface, where the electronic properties of the TI can be affected. The structure of the interface and processes happening at it are investigated by microscopy (SEM, TEM, STM) and spectroscopy techniques (EDX, XPS). The research started with the noble metals: Ag, Au and Pt. A good stability was observed for Au and Pt, whereas Ag reacted with Bi2Se3 already at room temperature, producing Ag2Se and AgBiSe2 phase. Interface stability was also checked at high temperature and results showed that the Au coating undergoes a coalescence process starting from 100 °C whereas the interface with Pt does not show any change at least up to 350 °C. At present we are focused on the interface with Ti, a metal which is regularly used as an adhesive layer in electrical contacts. At low coverage (<30 nm) Ti forms an extremely flat film, smoother than Au, Ag or Pt. At higher coverage the film undergoes buckle delamination, likely induced by stress release. The observed morphology indicates that a chemical interaction leads to the growth of the initial smooth Ti epitaxial film. Se interdiffusion and formation of interfacial TixSey phase is envisaged, as suggested from preliminary TEM observations of the interface structure. The presented results show the importance of the processes happening at the interface, especially solid-state chemical reactions, which are often neglected in the study of systems with metal/TI interfaces. Such instability has to be taken into account since the produced phases can affect transport properties of the material, increase a contact resistance or affect functionality of devices.
Keywords: Bi2Se3, interface, topological insulator, chemical instability
Published in RUNG: 20.08.2021; Views: 3333; Downloads: 14
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Electronic properties of phases in the quasi-binary Bi[sub]2Se[sub]3-Bi[sub]2S[sub]3 system
Zipporah Rini Benher, Sandra Gardonio, Mattia Fanetti, Paolo Moras, Asish K. Kundu, Chiara Bigi, Matjaž Valant, 2021, original scientific article

Abstract: We explored the properties of the quasi-binary Bi2Se3–Bi2S3 system over a wide compositional range. X-ray diffraction analysis demonstrates that rhombohedral crystals can be synthesized within the solid solution interval 0–22 mol% Bi2S3, while at 33 mol% Bi2S3 only orthorhombic crystals are obtained. Core level photoemission spectroscopy reveals the presence of Bi3+, Se2− and S2− species and the absence of metallic species, thus indicating that S incorporation into Bi2Se3 proceeds prevalently through the substitution of Se with S. Spin- and angle-resolved photoemission spectroscopy shows that topological surface states develop on the surfaces of the Bi2Se3−ySy (y ≤0.66) rhombohedral crystals, in close analogy with the prototypical case of Bi2Se3, while the orthorhombic crystals with higher S content turn out to be trivial semiconductors. Our results connect unambiguously the phase diagram and electronic properties of the Bi2Se3–Bi2S3 system.
Keywords: topological insulator, quasi-binary Bi2Se3-Bi2S3 system, electronic properties
Published in RUNG: 29.03.2021; Views: 3629; Downloads: 0
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