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Opis: Binary bismuth chalcogenides, Bi2Se3 and Bi2Te3, have been extensively studied as reference topological insulators (TIs). These materials are bulk insulators with topological surface states (TSS) crossing the Fermi level. In contrast to conventional surface states of metals, the TSS are extremely robust against local modifications at the surface, such as adsorbed adatoms, localized defects or changes in the surface termination. This aspect makes the TIs attractive for applications in spintronics, plasmonics, quantum computing and catalysis. A theoretical model of charge transport by the TI surface states predicts that the TSS survive, provided that bonding at the metal/TI interface is weak. Ab-initio calculations have been done to understand the electronic properties of Au, Ni, Pt, Pd and graphene layers in a contact with Bi2Se3. These calculations showed that for Au and graphene the spin-momentum locking of TSS is maintained at the interface. In another theoretical study, Ag and Au thin layers on Bi2Se3 have been predicted to show a large Rashba splitting and a high spin polarization of the Ag quantum wells, providing a great potential for development of the spintronic devices. Finally, the calculations have foreseen that the presence of the robust TSS affects the adsorption properties of metals (Au bi-layer and clusters of Au, Ag, Cu, Pt, and Pd) supported on TI, in some cases resulting in the enhancement of the catalytic processes. Despite the fundamental importance of the metal/TI interfaces and a number of theoretical studies predicting exotic interfacial phenomena, the experimental knowledge about the metals on the TI surfaces is surprisingly limited, especially concerning combined study of morphology, growth mode, electronic and chemical properties. In order to exploit the predicted physical properties of such systems, it is especially important to extend the study above the diluted coverage regime and to understand what is the growth morphology of the metal on the TI surface, to what extent the metal overlayer interacts with the TI substrate, how the TSS change with the presence of the metal overlayer and what is the reactivity of the system at the different stages of the overlayer growth. Within this frame, we present a comprehensive surface sensitive study, of Au and Ag on Bi2Se3 by means of ARPES, XPS, SEM, LEED and XRD. The obtained results allow us to discuss the relation between electronic and physical properties at two of the most important model metal/TI interfaces
Ključne besede: topological insulator, electronic properties, synchrotron radiation
Objavljeno v RUNG: 27.06.2019; Ogledov: 4036; Prenosov: 0
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Opis: We report the crystallisation of three forms of copper(II) isonicotinate-N-oxide complex and their phase interconversion via solvent-mediated crystal to crystal transformation. The different forms of copper complex have been isolated and characterised by single crystal X-ray diffraction. Gel phase crystallisation performed in hydrogels, low molecular weight gels and gels of tailored gelator showed crystal habit modification. Crystallisation in aqueous ethanol resulted in concomitant formation of blue (form-I) and green (form-II/IV) crystals while use of low molecular weight gel results in selective crystallization of the blue form-I under identical conditions. Comparison of gel phase and the solution state crystallisation in various solvent compositions reveals that the blue form-I is the thermodynamically stable form under ambient conditions.
Ključne besede: copper(II) complex, gel phase crystallisation, crystal habit modification, isonicotinate-N-oxide, X-ray diffraction
Objavljeno v RUNG: 08.11.2018; Ogledov: 3993; Prenosov: 0
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