1. Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrateYaqi Wang, Siddharth Alur, Yogesh Sharma, Fei Tong, Resham Thapa, Patrick Gartland, Tamara Issacs-Smith, Claude Ahyi, John Williams, Minseo Park, Mark Johnson, Tanya Paskova, Edward A Preble, Keith Evans, 2011, izvirni znanstveni članek Najdeno v: osebi Ključne besede: free-standing GaN substrate, Ultra-low leakage and high breakdown Schottky diodes Objavljeno: 16.01.2017; Ogledov: 3538; Prenosov: 0
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2. Growth of ZnO Nanorod Arrays on Flexible Substrates: Effect of Precursor Solution ConcentrationEunhee Lim, Sungkoo Lee, Dong-Joo Kim, Hyejin Park, Hosang Ahn, Tamara Issacs-Smith, John Williams, Ayayi Ahyi, Yogesh Sharma, Aaron Modic, Resham Thapa, Kyusang Kim, Yaqi Wang, Fei Tong, Kyeong K. Lee, Minseo Park, 2012, izvirni znanstveni članek Najdeno v: osebi Ključne besede: ZnO Nanorod Arrays, ITO-PET, solution growth Objavljeno: 16.01.2017; Ogledov: 3901; Prenosov: 0
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3. Biofunctionalized AlGaN/GaN high electron mobility transistor for DNA hybridization detectionAhjeong Son, John Williams, Michael Bozack, Jong Wook Hong, Jing Dai, Claude Ahyi, Moonil Kim, Yogesh Sharma, Fei Tong, Kyusang Kim, Siddharth Alur, Resham Thapa, Amir Dabiran, Minseo Park, 2012, izvirni znanstveni članek Najdeno v: osebi Ključne besede: AlGaN/GaN HEMT, DNA hybridization detection Objavljeno: 16.01.2017; Ogledov: 3986; Prenosov: 0
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4. Electrical characteristics of the vertical GaN rectifiers fabricated on bulk GaN waferTanya Paskova, Andrew Hanser, Andrew A. Allerman, Mark Johnson, Ginger Wheeler, Minseo Park, John Williams, Claude Ahyi, Tamara Issacs-Smith, Patrick Gartland, Fei Tong, Yogesh Sharma, Siddharth Alur, Hui Xu, Yaqi Wang, Edward A. Preble, Keith R. Evans, 2011, izvirni znanstveni članek Najdeno v: osebi Ključne besede: GaN, rectifier Objavljeno: 17.01.2017; Ogledov: 3654; Prenosov: 0
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