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1.
Effect of MXene interfacial layer on the field-effect mobility of a bottom-gate indacenodithiophene-benzothiadiazole copolymer field-effect transistor
Jurij Urbančič, Gvido Bratina, Egon Pavlica, 2023, objavljeni povzetek znanstvenega prispevka na konferenci

Ključne besede: MXene, IDT-BT, OFET, mobility
Objavljeno v RUNG: 13.11.2023; Ogledov: 795; Prenosov: 2
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2.
Time-of-flight photoconductivity investigation of high charge carrier mobility in ▫$Ti_3C_2T_x$▫ MXenes thin-film
Jurij Urbančič, Erika Tomsic, Manisha Chhikara, Nadiia Pastukhova, Vadym Tkachuk, Alex Dixon, Andraž Mavrič, Payam Hashemi, Davood Sabaghi, Ali Shaygan Nia, Gvido Bratina, Egon Pavlica, 2023, izvirni znanstveni članek

Opis: Charge transport through a randomly oriented multilayered network of two-dimensional (2D) Ti3C2Tx (where Tx is the surface termination and corresponds to O, OH and F) was studied using time-of-flight photoconductivity (TOFP) method, which is highly sensitive to the distribution of charge carrier velocities. We prepared samples comprising Ti3C2Tx with thickness of 12 nm or 6-monolayers. MXene flakes of size up to 16 μm were randomly deposited on the surface by spin-coating from water solution. Using TOFP, we have measured electron mobility that reached values up to 279 cm2/Vs and increase with electric-field in a Poole-Frenkel manner. These values are approximately 50 times higher than previously reported field-effect mobility. Interestingly, our zero-electric-field extrapolate approaches electron mobility measured using terahertz absorption method, which represents intra-flake transport. Our data suggest that macroscopic charge transport is governed by two distinct mechanisms. The high mobility values are characteristic for the intra-flake charge transport via the manifold of delocalized states. On the other hand, the observed Poole-Frenkel dependence of charge carrier mobility on the electric field is typical for the disordered materials and suggest the existence of an important contribution of inter-flake hopping to the overall charge transport.
Ključne besede: charge transport, multilayered network, flakes, time-of-flight photoconductivity, MXene exfoliation, high-mobility solution-cast thin-film, semiconducting MXene
Objavljeno v RUNG: 31.03.2023; Ogledov: 1423; Prenosov: 4
.pdf Celotno besedilo (1,97 MB)

3.
Enhancement of indacenodithiophene–benzothiadiazole copolymer field-effect mobility with MXenes
Jurij Urbančič, Nadiia Pastukhova, Manisha Chhikara, Hu Chen, Iain Mcculloch, Huanhuan Shi, Ali Shaygan Nia, Xinliang Feng, Egon Pavlica, Gvido Bratina, 2022, objavljeni povzetek znanstvenega prispevka na konferenci

Opis: The predominant mode of charge carrier transport in thin layers of organic semiconductors (OSs) is thermally-activated hopping between localized states. This results in lower charge mobility compared to inorganic semiconductors precluding the use of OSs in high-speed electronic devices. Therefore, significant effort is invested to improve charge carrier mobility of OS thin layers, which form the basis of most of the organic electronic devices. Recent advances in the field of two-dimensional (2D) materials stimulated their use as addition to OS thin layers to boost the charge carrier mobility. MXenes promise to deliver most of the benefits of 2D materials coupled with large scale fabrication capability. Herein we examined Ti3C2X (X is O or OH group termination) MXene, as a candidate to improve charge carrier mobility in thin layer of indacenodithiophene-co-benzothiadiazole (IDTBT), a polymer exhibiting high electron mobility in defect-free crystalline layers. In our work we demonstrate that improvement in electron mobility in solution-cast IDTBT thin layers can be achieved by depositing a non-connected network of MXene flakes at the gate-dielectric/IDBT interface. Bottom-gate field-effect transistors (FETs) comprising of Au electrodes on n-doped silicon wafer covered with 230 nm of thermally deposited SiO2 were prepared and characterized. Charge carrier mobilities determined from transfer characteristics of FETs composing neat IDTBT channels were found to be in the range of 1 - 2×10−2 cm2/Vs. Devices comprising MXene flakes at the interface between SiO2 and IDTBT, instead exhibited a factor of four increase in electron mobility, while preserving the on/off ratio of 104.
Ključne besede: MXene, IDTBT, charge carrier mobility, OFET
Objavljeno v RUNG: 20.10.2022; Ogledov: 1406; Prenosov: 10
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