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Interface phenomena between CdTe and ZnTe: Cu back contactAlessio Bosio,
Roberta Ciprian,
Alessio Lamperti,
I Rago,
Barbara Ressel,
Greta Rosa,
Matija Stupar,
E Weschke, 2018, izvirni znanstveni članek
Opis: Thin film technology has reached a maturity to achieve conversion efficiencies of the order of 22%. Among thin films, CdTe-based photovoltaic modules represent 80% of the total production. Nonetheless, some issues concerning back-contact are still open. In industrial process a chemical etching is required in order to make the CdTe film surface rich in Te. The Te-excess is fundamental in order to form a stable telluride compound with copper and to obtain an ohmic, low-resistance back-contact. Moreover, the Te-excess hinders the fast diffusion of copper in CdTe and its achievement of the junction region, preventing the destruction of the device. In this paper we study a ZnTe:Cu buffer layer deposited onto a CdTe film, characterized by a naturally Te-rich surface obtained with a particular chlorine heat treatment without any chemical etching. Copper diffusion and the CdTe/ZnTe:Cu interface were studied by x-ray
Ključne besede: solar cells, CdTe, ZnTe:Cu back contact
Objavljeno v RUNG: 29.11.2018; Ogledov: 4447; Prenosov: 0
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