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1.
Understanding the in-situ transformation of ▫$Cu_xO$▫ interlayers to increase the water splitting efficiency in NiO/n-Si photoanodes
Chao Feng, Zhi Liu, Huanxin Ju, Andraž Mavrič, Matjaž Valant, Jie Fu, Beibei Zhang, Yanbo Li, 2024, original scientific article

Abstract: The buried interface tens of nanometers beneath the solid-liquid junction is crucial for photocarrier extraction, influencing the overall efficiency of photoelectrochemical devices. Precise characterization of the interfacial properties is essential for device optimization but remains challenging. Here, we directly probe the in situ transformation of a CuxO interlayer at the NiO/n-Si interface by hard X-ray photoelectron spectroscopy. It is found that Cu(I) in the CuxO interlayer gradually transforms to Cu(II) with air exposure, forming an energetically more favorable interface and improving photoanode’s efficiency. Based on this finding, a reactive e-beam evaporation process is developed for the direct deposition of a CuO interlayer, achieving a half-cell solar-to-hydrogen efficiency of 4.56% for the optimized NiO/CuO/n-Si heterojunction photoanode. Our results highlight the importance of precision characterization of interfacial properties with advanced hard X-ray photoelectron spectroscopy in guiding the design of efficient solar water-splitting devices.
Keywords: photo anode, energy harvesting, nickel oxide, interface
Published in RUNG: 01.08.2024; Views: 1063; Downloads: 10
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2.
Interface engineering of Ta[sub]3N[sub]5 thin film photoanode for highly efficient photoelectrochemical water splitting
Jie Fu, Zeyu Fan, Mamiko Nakabayashi, Huanxin Ju, Nadiia Pastukhova, Yequan Xiao, Chao Feng, Naoya Shibata, Kazunari Domen, Yanbo Li, 2022, original scientific article

Abstract: Interface engineering is a proven strategy to improve the efficiency of thin film semiconductor based solar energy conversion devices. Ta3N5 thin film photoanode is a promising candidate for photoelectrochemical (PEC) water splitting. Yet, a concerted effort to engineer both the bottom and top interfaces of Ta3N5 thin film photoanode is still lacking. Here, we employ n-type In:GaN and p-type Mg:GaN to modify the bottom and top interfaces of Ta3N5 thin film photoanode, respectively. The obtained In:GaN/Ta3N5/Mg:GaN heterojunction photoanode shows enhanced bulk carrier separation capability and better injection efficiency at photo- anode/electrolyte interface, which lead to a record-high applied bias photon-to-current efficiency of 3.46% for Ta3N5-based photoanode. Furthermore, the roles of the In:GaN and Mg:GaN layers are distinguished through mechanistic studies. While the In:GaN layer con- tributes mainly to the enhanced bulk charge separation efficiency, the Mg:GaN layer improves the surface charge inject efficiency. This work demonstrates the crucial role of proper interface engineering for thin film-based photoanode in achieving efficient PEC water splitting.
Keywords: photocatalysis, renewable energy
Published in RUNG: 09.02.2022; Views: 2832; Downloads: 83
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