1. Electrical characteristics of the vertical GaN rectifiers fabricated on bulk GaN waferYaqi Wang, Hui Xu, Siddharth Alur, Yogesh Sharma, Fei Tong, Patrick Gartland, Tamara Issacs-Smith, Claude Ahyi, John Williams, Minseo Park, Ginger Wheeler, Mark Johnson, Andrew A. Allerman, Andrew Hanser, Tanya Paskova, Edward A. Preble, Keith R. Evans, 2011, izvirni znanstveni članek Ključne besede: GaN, rectifier
Objavljeno v RUNG: 17.01.2017; Ogledov: 5184; Prenosov: 0
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2. Biofunctionalized AlGaN/GaN high electron mobility transistor for DNA hybridization detectionResham Thapa, Siddharth Alur, Kyusang Kim, Fei Tong, Yogesh Sharma, Moonil Kim, Claude Ahyi, Jing Dai, Jong Wook Hong, Michael Bozack, John Williams, Ahjeong Son, Amir Dabiran, Minseo Park, 2012, izvirni znanstveni članek Ključne besede: AlGaN/GaN HEMT, DNA hybridization detection
Objavljeno v RUNG: 16.01.2017; Ogledov: 5602; Prenosov: 0
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3. Flexible organic/inorganic hybrid solar cells based on conjugated polymer and ZnO nanorod arrayFei Tong, Kyusang Kim, Daniel Martinez, Resham Thapa, Ayayi Ahyi, John Williams, Dong-Joo Kim, Sungkoo Lee, Eunhee Lim, Kyeong K Lee, Minseo ParK, 2012, izvirni znanstveni članek Ključne besede: organic/inorganic hybrid solar cells, conjugated polymer, ZnO nanorod array
Objavljeno v RUNG: 16.01.2017; Ogledov: 5464; Prenosov: 0
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4. Growth of ZnO Nanorod Arrays on Flexible Substrates: Effect of Precursor Solution ConcentrationFei Tong, Kyusang Kim, Yaqi Wang, Resham Thapa, Yogesh Sharma, Aaron Modic, Ayayi Ahyi, Tamara Issacs-Smith, John Williams, Hosang Ahn, Hyejin Park, Dong-Joo Kim, Sungkoo Lee, Eunhee Lim, Kyeong K. Lee, Minseo Park, 2012, izvirni znanstveni članek Ključne besede: ZnO Nanorod Arrays, ITO-PET, solution growth
Objavljeno v RUNG: 16.01.2017; Ogledov: 5531; Prenosov: 0
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5. Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrateYaqi Wang, Siddharth Alur, Yogesh Sharma, Fei Tong, Resham Thapa, Patrick Gartland, Tamara Issacs-Smith, Claude Ahyi, John Williams, Minseo Park, Mark Johnson, Tanya Paskova, Edward A Preble, Keith Evans, 2011, izvirni znanstveni članek Ključne besede: free-standing GaN substrate, Ultra-low leakage and high breakdown Schottky diodes
Objavljeno v RUNG: 16.01.2017; Ogledov: 5099; Prenosov: 0
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