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Opis: Synthesis of colloidal nanoparticles (NPs) which offer good colloidal stability is quite important for different applications like spin-coating, dip-coating etc. Having metallic nanoparticles in the form of stable suspension allow the generation of thin films with desired thicknesses. We will present the production of different classes of materials starting from colloidal metal NPs. An example will be given on the preparation of Fe2O3 and WO3 thin films which are used in photoelectrochemical oxidation of water (e.g. water splitting). Another transformation which involves metallic NPs include the preparation of MoSe2 and WSe2 thin films which is achieved in a tube furnace at elevated temperatures. Very recently, the use of metallic NPs were also extended for the preparation of transition metal carbides. We managed to produce W2C and WC phases starting from metallic W NPs. The details of this phase conversion will be discussed. The presentation will provide details on how transition metallic NPs can be used to prepare metal oxide, metal selenide and metal carbides.
Ključne besede: colloidal metal nanoparticles, thin films, water splitting
Objavljeno v RUNG: 16.01.2025; Ogledov: 143; Prenosov: 0
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Opis: Topological insulators (TIs) represent a new state of matter that possess a different band structure than regular insulators or conductors. They are characterized with a band gap in the bulk and conductive topological states on the surface, which are spin polarized and robust toward contamination or deformation of the surface. Since the intriguing properties of the TIs are localized at the surface, it is important to obtain knowledge of the possible phenomena happening at the interface between TIs and other materials. This is especially true in the case of metals, due to the fact that such interfaces will be present in the majority of foreseen TI applications. The presented study combines microscopy and spectroscopy techniques for characterization of morphology, stability and chemical interaction at the interface between TI and metals deposited by means of physical vapor deposition. Our research is based on the interface of Bi2Se3 topological insulator with Ag, Ti and Pt – metals that can be encountered in devices or applications predicted to utilize the special properties of topological insulators. STM and SEM imaging of Ag/Bi2Se3 interface showed that Ag atoms arrange on the surface in the form of islands, whereas significantly bigger agglomerates are found at the surface steps. The interface was found to be unstable in time and resulted in the absorption of the metal into the crystal at room temperature. Evidences of a chemical reaction at the Ag/Bi2Se3 interface are presented, showing that new phases (Ag2Se, AgBiSe2 and metallic Bi) are formed. Deposition of Ti on Bi2Se3 resulted in different morphologies depending on the film thickness. At a very low coverage (<1 Å) islands are formed. However, the islands growth is hindered before the completion of a full layer due to the occurrence of a chemical reaction. No surface features could be detected by SEM for Ti coverage up to 20 nm. In contrary, when Ti thickness reached 40 nm, compressive stress triggered buckling of the deposited film. XPS analysis revealed that a redox solid-state reaction occurs at the Ti/Bi2Se3 interface at room temperature forming titanium selenides and metallic Bi. The reaction has significant kinetics even at cryogenic temperature of 130 K. Pt forms a homogenous film over the whole substrate surface, which is stable in time at room temperature. Although the interface of Pt with Bi2Se3 was found to be i less reactive compared to Ag and Ti, an interfacial phase formed upon annealing to ∼90 °C was detected by TEM cross section experiment. A model for prediction of interfacial reactions between a metal and Bi2Se3 based on the standard reduction potential of the metals and Gibbs free energy for a model reaction is presented. Based on these two values the reaction can be expected to result in the formation of binary and/or ternary selenides and Bi. Presented work shows on the importance of metal/topological insulator interfaces characterization taking into account the possibility of a chemical reaction with all of its consequences. Results should be considered for future theoretical and applicative studies involving such interfaces as well as for the possible engineering of 2D TI heterostructures.
Ključne besede: topological insulators, topological surface states, Bi2Se3, thin films, Ag, Ti, Pt, morphology, interfaces, solid-state reaction, metal selenides, reactivity, stability, electron microscopy, dissertations
Objavljeno v RUNG: 09.06.2021; Ogledov: 5532; Prenosov: 186
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Opis: V magistrskem delu smo se osredoto£ili na pripravo in karakterizacijo heterogenih ve£plastnih tankih filmov sestavljenih iz kovin ter teºkih kovin. Za izdelavo vzorcev smo izbrali dve feromagnetni kovini, Fe in Gd, ter eno divalentno kovino iz redkih zemelj, Yb. Tanke filme smo nana²ali na kristalno povr²ino volframa W(110) ter molibdena Mo(110). V primeru Fe na povr²ini W(110) in Mo(110) ter Yb na pov²ini Mo(110) smo uspe²no dolo£ili pogoje, potrebne za nana²anje atomsko enakomernih filmov. S pomo £jo kotno odvisne fotoemisije smo preu£evali kvantna stanja v Fe in Yb filmih na Mo in W kristalih. Celotno eksperimentalno delo je potekalo na ºarkovnih linijah VUV-Photoemission in²tituta (ISM-CNR) ter BaDElPh pri sinhrotronu Elettra v Trstu.
Ključne besede: electronic states, thin metal films, heavy metal surfaces
Objavljeno v RUNG: 04.12.2019; Ogledov: 5276; Prenosov: 118
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