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Naslov:Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate
Avtorji:ID Wang, Yaqi, Department of Physics, Auburn University, Auburn, AL 36849, USA (Avtor)
ID Alur, Siddharth, Department of Physics, Auburn University, Auburn, AL 36849, USA (Avtor)
ID Sharma, Yogesh, Department of Physics, Auburn University, Auburn, AL 36849, USA (Avtor)
ID Tong, Fei, Department of Physics, Auburn University, Auburn, AL 36849, USA (Avtor)
ID Thapa, Resham, Department of Physics, Auburn University, Auburn, AL 36849, USA (Avtor)
ID Gartland, Patrick, Department of Physics, Auburn University, Auburn, AL 36849, USA (Avtor)
ID Issacs-Smith, Tamara, Department of Physics, Auburn University, Auburn, AL 36849, USA (Avtor)
ID Ahyi, Claude, Department of Physics, Auburn University, Auburn, AL 36849, USA (Avtor)
ID Williams, John, Department of Physics, Auburn University, Auburn, AL 36849, USA (Avtor)
ID Park, Minseo, Department of Physics, Auburn University, Auburn, AL 36849, USA (Avtor)
ID Johnson, Mark, Department of Physics, Auburn University, Auburn, AL 36849, USA (Avtor)
ID Paskova, Tanya, Department of Physics, Auburn University, Auburn, AL 36849, USA (Avtor)
ID Preble, Edward A, Department of Physics, Auburn University, Auburn, AL 36849, USA (Avtor)
ID Evans, Keith, Department of Physics, Auburn University, Auburn, AL 36849, USA (Avtor)
Datoteke: Gradivo nima datotek, ki so prostodostopne za javnost. Gradivo je morda fizično dosegljivo v knjižnici fakultete, zalogo lahko preverite v COBISS-u. Povezava se odpre v novem oknu
Jezik:Angleški jezik
Vrsta gradiva:Delo ni kategorizirano
Tipologija:1.01 - Izvirni znanstveni članek
Organizacija:UNG - Univerza v Novi Gorici
Ključne besede:free-standing GaN substrate, Ultra-low leakage and high breakdown Schottky diodes
Leto izida:2011
Št. strani:4
Številčenje:1, 26
PID:20.500.12556/RUNG-2896-756283ec-cf5b-a33a-3552-fbc536a4a866 Novo okno
COBISS.SI-ID:4635131 Novo okno
DOI:http://dx.doi.org/10.1088/0268-1242/26/2/022002 Novo okno
NUK URN:URN:SI:UNG:REP:6SGICGTC
Datum objave v RUNG:16.01.2017
Število ogledov:4414
Število prenosov:0
Metapodatki:XML RDF-CHPDL DC-XML DC-RDF
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Skupna ocena:(0 glasov)
Vaša ocena:Ocenjevanje je dovoljeno samo prijavljenim uporabnikom.
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Gradivo je del revije

Naslov:Semiconductor Science and Technology
Založnik:IOP Publishing: Hybrid Open Access
Leto izida:2011
ISSN:0268-1242

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