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Naslov:CVD Growth of Molybdenum Diselenide Surface Structures with Tailored Morphology
Avtorji:ID Sial, M. Naeem, Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of China Chengdu 610054, P. R. China (Avtor)
ID Muhammad, Usman, Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of China Chengdu 610054, P. R. China (Avtor)
ID Zheng, Binjie, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China (Avtor)
ID Yu, Yanan, Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of China Chengdu 610054, P. R. China (Avtor)
ID Mavrič, Andraž, University of Nova Gorica, Materials Research Laboratory, Vipavska 13, SI-5000 Nova Gorica, Slovenia. (Avtor)
ID Qing, Fangzhu, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China (Avtor)
ID Valant, Matjaž, University of Nova Gorica, Materials Research Laboratory, Vipavska 13, SI-5000 Nova Gorica, Slovenia. (Avtor)
ID Wang, Zhiming M., Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of China Chengdu 610054, P. R. China (Avtor)
Datoteke:.pdf 06_CrystEngComm_CVD_Growth_of_Molybdenum_Diselenide_Surface_Structures_with_Tailored_Morphology.pdf (2,68 MB)
MD5: E8E3629FA9F2221D1F636C5F62C89D76
 
Jezik:Angleški jezik
Vrsta gradiva:Delo ni kategorizirano
Tipologija:1.01 - Izvirni znanstveni članek
Organizacija:UNG - Univerza v Novi Gorici
Opis:Controllable atmospheric pressure CVD has been optimized to grow transition metal dichalcogenide MoSe2 with tunable morphology at 750 °C on a silicon substrate with a native oxide layer of 250 nm. Utilizing tetrapotassium perylene-3,4,9,10-tetracarboxylate (PTAS) as a seed promoter and varying the vertical distance between the substrate and the precursor MoO3, different morphologies of MoSe2 were achieved, including 2D triangles, hexagons, 3D pyramids and vertically aligned MoSe2 sheets. We find that the shape of MoSe2 is highly dependent upon the distance h between the substrate and the precursor. The change in the morphology is attributed to the confinement of vapor (MoO3 and Se) precursors and their concentrations due to the change in h. These results are helpful in improving our understanding about the factors which influence the morphology (shape evolution) and also the continuous growth of MoSe2 films.
Ključne besede:Transition metal dichalcogenides, 2D materials, Seed promotor, Chemical vapor deposition, Molybdenum diselenide
Verzija publikacije:Recenzirani rokopis
Leto izida:2018
Št. strani:4867-4874
Številčenje:20, 33
PID:20.500.12556/RUNG-4025-d5a25bfa-fdb3-513e-644b-18bbdb1624d3 Novo okno
COBISS.SI-ID:5190139 Novo okno
DOI:10.1039/C8CE00917A Novo okno
NUK URN:URN:SI:UNG:REP:YHCIHRZQ
Datum objave v RUNG:20.08.2018
Število ogledov:3974
Število prenosov:15
Metapodatki:XML RDF-CHPDL DC-XML DC-RDF
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Gradivo je del revije

Naslov:CrystEngComm
Skrajšan naslov:CrystEngComm
Založnik:Royal Society of Chemistry
Leto izida:2018
ISSN:1466-8033

Gradivo je financirano iz projekta

Financer:ARRS - Agencija za raziskovalno dejavnost Republike Slovenije
Številka projekta:P2-0377

Licence

Licenca:CC BY-NC-ND 4.0, Creative Commons Priznanje avtorstva-Nekomercialno-Brez predelav 4.0 Mednarodna
Povezava:http://creativecommons.org/licenses/by-nc-nd/4.0/deed.sl
Opis:Najbolj omejujoča licenca Creative Commons. Uporabniki lahko prenesejo in delijo delo v nekomercialne namene in ga ne smejo uporabiti za nobene druge namene.
Začetek licenciranja:20.08.2018

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