Naslov: | The role of charge transfer at reduced graphene oxide/organic semiconductor interface on the charge transport properties |
---|
Avtorji: | ID Bratina, Gvido, ung (Avtor) ID Pavlica, Egon, ung (Avtor) |
Datoteke: |
Gradivo nima datotek, ki so prostodostopne za javnost. Gradivo je morda fizično dosegljivo v knjižnici fakultete, zalogo lahko preverite v COBISS-u. ![Povezava se odpre v novem oknu Povezava se odpre v novem oknu](teme/rungDev/img/NovoOkno.png) |
---|
Jezik: | Angleški jezik |
---|
Vrsta gradiva: | Delo ni kategorizirano |
---|
Tipologija: | 1.01 - Izvirni znanstveni članek |
---|
Organizacija: | UNG - Univerza v Novi Gorici
|
---|
Opis: | The effect of 1-pyrenesulfonicacid sodium salt (1-PSA), tetracyanoethylene (TCNE) and tetrafluoro- tetracyanoquinodimethane (F4-TCNQ) on charge transport properties of reduced graphene oxide (RGO) is examined by measuring the transfer characteristics of field-effect transistors and co-planar time-of-flight photocurrent technique. Evidence of p-type doping and a reduction of mobility of electrons in RGO upon deposition of these materials is observed. Time-resolved photocurrent measurements show a reduction in elec- tron mobility even at submonolayer coverage of these materials. The variation of transit time with different coverages reveals that electron mobility decreases with increasing the surface coverage of 1-PSA, TCNE and F4- TCNQ to a certain extent, while at higher coverage the electron mobility is slightly recovered. All three molecules show the same trend in charge carrier mobility variation with coverage, but with different magnitude. Among all three molecules, 1-PSA acts as weak electron acceptor compared to TCNE and F4-TCNQ. The additional fluorine moieties in F4-TCNQ provides excellent electron withdrawing capability compared to TCNE. The experimental results are consistent with the density functional theory calculations. |
---|
Ključne besede: | organic semiconductors, reduced graphene oxide, time-resolved photocurrent measurements, organic thin film transistors |
---|
Leto izida: | 2019 |
---|
Št. strani: | 7 |
---|
Številčenje: | 75 |
---|
PID: | 20.500.12556/RUNG-4822-214af2dc-e387-b6f8-3589-05c705795d41 ![Povezava se odpre v novem oknu Novo okno](teme/rungDev/img/NovoOkno.png) |
---|
COBISS.SI-ID: | 5473275 ![Povezava se odpre v novem oknu Novo okno](teme/rungDev/img/NovoOkno.png) |
---|
DOI: | 10.1016/j.orgel.2019.105499 ![Povezava se odpre v novem oknu Novo okno](teme/rungDev/img/NovoOkno.png) |
---|
NUK URN: | URN:SI:UNG:REP:UFISCPAF |
---|
Datum objave v RUNG: | 28.10.2019 |
---|
Število ogledov: | 4328 |
---|
Število prenosov: | 1 |
---|
Metapodatki: | ![Izvoz v DC-RDF DC-RDF](teme/rungDev/img/icon_dc_rdf.gif) |
---|
:
|
Kopiraj citat |
---|
| | | Skupna ocena: | (0 glasov) |
---|
Vaša ocena: | Ocenjevanje je dovoljeno samo prijavljenim uporabnikom. |
---|
Objavi na: | ![Bookmark and Share](teme/rungDev/img/addtoany.png) |
---|
Postavite miškin kazalec na naslov za izpis povzetka. Klik na naslov izpiše
podrobnosti ali sproži prenos. |