Defect creation and Diffusion under electric fields from first-principles: the prototypical case of silicon dioxide

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Title:	Defect creation and Diffusion under electric fields from first-principles: the prototypical case of silicon dioxide
Authors:	ID Valant, Matjaž, UNG (Author) ID Luigi, Giacomazzi, UNG (Author), et al.
Files:	This document has no files that are freely available to the public. This document may have a physical copy in the library of the organization, check the status via COBISS.
Language:	English
Work type:	Not categorized
Typology:	1.08 - Published Scientific Conference Contribution
Organization:	UNG - University of Nova Gorica
Keywords:	Structural defect, amorphous structure, first-principle calcualtions
Year of publishing:	2019
PID:	20.500.12556/RUNG-4837-ec46d610-d68b-f68c-1ad7-6e89dcc3b779
COBISS.SI-ID:	5476347
DOI:	10.1109/SISPAD.2019.8870555
NUK URN:	URN:SI:UNG:REP:DLSX27TF
Publication date in RUNG:	30.10.2019
Views:	2888
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