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Naslov:Room-temperature solid-state reaction at the Ag/Bi[sub]2Se[sub]3 interface
Avtorji:ID Ferfolja, Katja (Avtor)
ID Fanetti, Mattia (Avtor)
ID Mikulska, Iuliia (Avtor)
ID Gardonio, Sandra (Avtor)
ID Valant, Matjaž (Avtor)
Datoteke: Gradivo nima datotek, ki so prostodostopne za javnost. Gradivo je morda fizično dosegljivo v knjižnici fakultete, zalogo lahko preverite v COBISS-u. Povezava se odpre v novem oknu
Jezik:Angleški jezik
Vrsta gradiva:Neznano
Tipologija:1.12 - Objavljeni povzetek znanstvenega prispevka na konferenci
Organizacija:UNG - Univerza v Novi Gorici
Opis:Topological insulators (TI) are materials that, while having a forbidden bandgap in bulk, are conductors at their surface due to presence of surface-localized electronic states crossing the band gap. [1] TIs are possible because of a time reversal symmetry and spin-orbit coupling, which invert bulk band states in their energy positions and make the bulk band structure non trivial. Consequently, the topological surface states (TSS) emerge on the surface of these materials. Unlike ordinary surface states, TSS cannot be destroyed by contamination or defects on the surface. Additionally, TSS are also spin polarized, which means that when applying current to TI, the current will have a well defined direction of the electron spins. The topological insulators - a relatively new class of materials - are being widely studied not only from fundamental aspects, but also from their applicative perspectives. It has been predicted that TIs could be used in fields of spintronics, electronics and catalysis. [2,3] Interestingly, only a few studies about metal/TI interfaces have been reported. This is surprising since integration of TI in the applications will often necessitate an interface with the metal, therefore, detailed knowledge on chemistry and electrical conditions at the interface will be required. In this contribution results on research on the chemistry of the Ag/Bi2Se interface will be presented, in particularonthesolid-statereactionbetweennanoparticles.IthasbeenobservedthatwhenBi2Se3 andAgare put in contact a chemical reaction occurs at the interface, producing AgBiSe2 and Ag2Se. Interestingly, the reaction already occurs at room temperature, which is not usual for solid-state reactions. In literature this reaction has not been properly described. The authors rather described it as intercalation of the silver atoms, which we have disproved and showed that recrystallization of the new phases occurs. [3,4,5] The results will alsobediscussedincomparisonwithothertwoAg/Bi2Se3 systemsunderourinvestigation:i)Agdepositedby achemicalrouteonBi2Se3 nanoflakesandii)AgdepositedfromavapourphaseinvacuumonaBi2Se3.single crystal
Ključne besede:topological insulators, topological surface states, solid-state reaction, TI/metal interface
Leto izida:2017
Št. strani:Str. 1
PID:20.500.12556/RUNG-6681 Novo okno
COBISS.SI-ID:73561603 Novo okno
UDK:54
NUK URN:URN:SI:UNG:REP:3ZMOLEPW
Datum objave v RUNG:20.08.2021
Število ogledov:2385
Število prenosov:0
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Gradivo je del monografije

Naslov:Zbornik referatov in povzetkov
Uredniki:Venčeslav Kaučič
Kraj izida:Ljubljana
Založnik:Slovensko kemijsko društvo
Leto izida:2017
ISBN:978-961-93849-3-0
COBISS.SI-ID:291648256 Novo okno

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