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Naslov:Enhancement of indacenodithiophene–benzothiadiazole copolymer field-effect mobility with MXenes
Avtorji:ID Urbančič, Jurij (Avtor)
ID Pastukhova, Nadiia (Avtor)
ID Chhikara, Manisha (Avtor)
ID Chen, Hu (Avtor)
ID Mcculloch, Iain (Avtor)
ID Shi, Huanhuan (Avtor)
ID Shaygan Nia, Ali (Avtor)
ID Feng, Xinliang (Avtor)
ID Pavlica, Egon (Avtor)
ID Bratina, Gvido (Avtor)
Datoteke:URL https://virtual.oxfordabstracts.com/#/event/public/1649/submission/247
 
Jezik:Angleški jezik
Vrsta gradiva:Neznano
Tipologija:1.12 - Objavljeni povzetek znanstvenega prispevka na konferenci
Organizacija:UNG - Univerza v Novi Gorici
Opis:The predominant mode of charge carrier transport in thin layers of organic semiconductors (OSs) is thermally-activated hopping between localized states. This results in lower charge mobility compared to inorganic semiconductors precluding the use of OSs in high-speed electronic devices. Therefore, significant effort is invested to improve charge carrier mobility of OS thin layers, which form the basis of most of the organic electronic devices. Recent advances in the field of two-dimensional (2D) materials stimulated their use as addition to OS thin layers to boost the charge carrier mobility. MXenes promise to deliver most of the benefits of 2D materials coupled with large scale fabrication capability. Herein we examined Ti3C2X (X is O or OH group termination) MXene, as a candidate to improve charge carrier mobility in thin layer of indacenodithiophene-co-benzothiadiazole (IDTBT), a polymer exhibiting high electron mobility in defect-free crystalline layers. In our work we demonstrate that improvement in electron mobility in solution-cast IDTBT thin layers can be achieved by depositing a non-connected network of MXene flakes at the gate-dielectric/IDBT interface. Bottom-gate field-effect transistors (FETs) comprising of Au electrodes on n-doped silicon wafer covered with 230 nm of thermally deposited SiO2 were prepared and characterized. Charge carrier mobilities determined from transfer characteristics of FETs composing neat IDTBT channels were found to be in the range of 1 - 2×10−2 cm2/Vs. Devices comprising MXene flakes at the interface between SiO2 and IDTBT, instead exhibited a factor of four increase in electron mobility, while preserving the on/off ratio of 104.
Ključne besede:MXene, IDTBT, charge carrier mobility, OFET
Leto izida:2022
Št. strani:1 str.
PID:20.500.12556/RUNG-7672 Novo okno
COBISS.SI-ID:126467587 Novo okno
UDK:53
NUK URN:URN:SI:UNG:REP:WXJMKD5Y
Datum objave v RUNG:20.10.2022
Število ogledov:1131
Število prenosov:9
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Gradivo je del monografije

Naslov:Seventh International Conference on Multifunctional, Hybrid and Nanomaterials : 19-22 October 2022, Genoa, Italy
Kraj izida:[United Kingdom
Založnik:s. n.
Leto izida:2022
COBISS.SI-ID:126458115 Novo okno

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