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Naslov:A rational design of isoindigo-based conjugated microporous n-type semiconductors for high electron mobility and conductivity
Avtorji:ID Ranjeesh, Kayaramkodath C. (Avtor)
ID Rezk, Ayman (Avtor)
ID Martinez, Jose Ignacio (Avtor)
ID Gaber, Safa (Avtor)
ID Merhi, Areej (Avtor)
ID Škorjanc, Tina (Avtor)
ID Finšgar, Matjaž (Avtor)
ID Luckachan, Gisha Elizabeth (Avtor)
ID Trabolsi, Ali (Avtor)
ID Kaafarani, Bilal R. (Avtor)
Datoteke:URL https://onlinelibrary.wiley.com/doi/full/10.1002/advs.202303562
 
.pdf Advanced_Science_-_2023_-_Ranjeesh.pdf (2,08 MB)
MD5: 721FFBE09BAB1CCF3EB9658488DDC462
 
URL https://onlinelibrary.wiley.com/doi/full/10.1002/advs.202303562
 
Jezik:Angleški jezik
Vrsta gradiva:Neznano
Tipologija:1.01 - Izvirni znanstveni članek
Organizacija:UNG - Univerza v Novi Gorici
Opis:The development of n-type organic semiconductors has evolved significantly slower in comparison to that of p-type organic semiconductors mainly due to the lack of electron-deficient building blocks with stability and processability. However, to realize a variety of organic optoelectronic devices, high-performance n-type polymer semiconductors are essential. Herein, conjugated microporous polymers (CMPs) comprising isoindigo acceptor units linked to benzene or pyrene donor units (BI and PI) showing n-type semiconducting behavior are reported. In addition, considering the challenges of deposition of a continuous and homogeneous thin film of CMPs for accurate Hall measurements, a plasma-assisted fabrication technique is developed to yield uniform thin films. The fully conjugated 2D networks in PI- and BI-CMP films display high electron mobility of 6.6 and 3.5 cm2 V−1 s−1, respectively. The higher carrier concentration in PI results in high conductivity (5.3 mS cm−1). Both experimental and computational studies are adequately combined to investigate structure–property relations for this intriguing class of materials in the context of organic electronics.
Ključne besede:conjugated microporous polymers, isoindigo, semiconductors, conductivity, electron mobility
Datum objave:01.01.2023
Leto izida:2023
Št. strani:str. 1-8
Številčenje:Vol. 10, issue 29, [article no.] 2303562
PID:20.500.12556/RUNG-8343-72048af5-c860-d7ad-e982-4340d8584fca Novo okno
COBISS.SI-ID:161591299 Novo okno
UDK:54
ISSN pri članku:2198-3844
DOI:10.1002/advs.202303562 Novo okno
NUK URN:URN:SI:UNG:REP:H5RR6APG
Datum objave v RUNG:18.08.2023
Število ogledov:903
Število prenosov:7
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Gradivo je del revije

Naslov:Advanced science
Založnik:Wiley-VCH
ISSN:2198-3844
COBISS.SI-ID:525092889 Novo okno

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