1. Multi-layer palladium diselenide as a contact material for two-dimensional tungsten diselenide field-effect transistorsGennadiy Murastov, Muhammad Awais Aslam, Simon Leitner, Vadym Tkachuk, Iva Plutnarová, Egon Pavlica, Raul D. Rodriguez, Zdeněk Sofer, Aleksandar Matković, 2024, izvirni znanstveni članek Opis: Tungsten diselenide (WSe2) has emerged as a promising ambipolar semiconductor material for field-effect transistors (FETs) due to its unique electronic properties, including a sizeable band gap, high carrier mobility, and remarkable on–off ratio. However, engineering the contacts to WSe2 remains an issue, and high contact barriers prevent the utilization of the full performance in electronic applications. Furthermore, it could be possible to tune the contacts to WSe2 for effective electron or hole injection and consequently pin the threshold voltage to either conduction or valence band. This would be the way to achieve complementary metal–oxide–semiconductor devices without doping of the channel material.This study investigates the behaviour of two-dimensional WSe2 field-effect transistors with multi-layer palladium diselenide (PdSe2) as a contact material. We demonstrate that PdSe2 contacts favour hole injection while preserving the ambipolar nature of the channel material. This consequently yields high-performance p-type WSe2 devices with PdSe2 van der Waals contacts. Further, we explore the tunability of the contact interface by selective laser alteration of the WSe2 under the contacts, enabling pinning of the threshold voltage to the valence band of WSe2, yielding pure p-type operation of the devices.
Ključne besede: field-effect transistor, tungsten diselenide, van der Waals, two-dimensional materials
Objavljeno v RUNG: 29.05.2024; Ogledov: 164; Prenosov: 0
 Celotno besedilo (3,06 MB)
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2. Time-of-flight photoconductivity investigation of high charge carrier mobility in ▫$Ti_3C_2T_x$▫ MXenes thin-filmJurij Urbančič, Erika Tomsic, Manisha Chhikara, Nadiia Pastukhova, Vadym Tkachuk, Alex Dixon, Andraž Mavrič, Payam Hashemi, Davood Sabaghi, Ali Shaygan Nia, Gvido Bratina, Egon Pavlica, 2023, izvirni znanstveni članek Opis: Charge transport through a randomly oriented multilayered network of two-dimensional (2D) Ti3C2Tx (where Tx is the surface termination and corresponds to O, OH and F) was studied using time-of-flight photoconductivity (TOFP) method, which is highly sensitive to the distribution of charge carrier velocities. We prepared samples comprising Ti3C2Tx with thickness of 12 nm or 6-monolayers. MXene flakes of size up to 16 μm were randomly deposited on the surface by spin-coating from water solution. Using TOFP, we have measured electron mobility that reached values up to 279 cm2/Vs and increase with electric-field in a Poole-Frenkel manner. These values are approximately 50 times higher than previously reported field-effect mobility. Interestingly, our zero-electric-field extrapolate approaches electron mobility measured using terahertz absorption method, which represents intra-flake transport. Our data suggest that macroscopic charge transport is governed by two distinct mechanisms. The high mobility values are characteristic for the intra-flake charge transport via the manifold of delocalized states. On the other hand, the observed Poole-Frenkel dependence of charge carrier mobility on the electric field is typical for the disordered materials and suggest the existence of an important contribution of inter-flake hopping to the overall charge transport.
Ključne besede: charge transport, multilayered network, flakes, time-of-flight photoconductivity, MXene exfoliation, high-mobility solution-cast thin-film, semiconducting MXene
Objavljeno v RUNG: 31.03.2023; Ogledov: 1362; Prenosov: 4
Celotno besedilo (1,97 MB) |
3. Van der Waals heterostructuresVadym Tkachuk, doktorska disertacija Ključne besede: Graphene, hexagonal boron nitride, PDI8-CN2, organic semiconductor, heterostructure, charge transport, electronic properties, 2D crystal, 2D crystal transfer, tunneling.
Objavljeno v RUNG: 24.10.2022; Ogledov: 1542; Prenosov: 55
Celotno besedilo (38,13 MB) |
4. Molecular alignment on graphene surface determines transport properties of graphene/organic semiconductor transistorsVadym Tkachuk, Egon Pavlica, Gvido Bratina, 2020, izvirni znanstveni članek Opis: Graphene field-effect transistor structures were used to investigate the role of molecular alignment on charge transport properties of heterostructures comprising a single-layer graphene and variable thickness of N,N′-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bisdicarboximide (PDI8-CN2) - an n-type organic semiconductor. Our atomic force microscopy data show that under selected growth conditions PDI8-CN2 grows in a layer-by-layer fashion up to a second monolayer. The first layer comprises flat-lying molecules, whereas the molecules in the second layer orient themselves in an upright orientation. Transconductance measurements show that the flat-lying molecules have little effect on the position of the Fermi level in graphene. Upright oriented molecules in the second layer instead, have a strong effect as to neutralize native p-type doping of graphene and cause a shift of charge-neutrality level towards the Dirac point. We interpret such behavior in terms of different orientation of the surface dipole on layers with different molecular orientations. At the same time the overall mobility of the charge carriers reaches values exceeding 3000 cm2/Vs.
Ključne besede: organski polprevodniki, grafen, transport električnega naboja
Objavljeno v RUNG: 13.10.2020; Ogledov: 2781; Prenosov: 0
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