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Naslov:Effect of gamma irradiation on Schottky-contacted vertically aligned ZnO nanorod-based hydrogen sensor
Avtorji:ID Ranwa, Sapana, Department of Electrical Engineering, Indian Institute of Technology Jodhpur, Jodhpur-342011, India (Avtor)
ID Barala, Surendra Singh, Department of Electrical Engineering, Indian Institute of Technology Jodhpur, Jodhpur-342011, India and Defence Laboratory, Jodhpur 342011, India (Avtor)
ID Fanetti, Mattia, Materials Research Laboratory, University of Nova Gorica, Vipavska 11c SI-5270 Ajdovšcina, Slovenia (Avtor)
ID Kumar, Mahesh, Department of Electrical Engineering, Indian Institute of Technology Jodhpur, Jodhpur-342011, India (Avtor)
Datoteke: Gradivo nima datotek, ki so prostodostopne za javnost. Gradivo je morda fizično dosegljivo v knjižnici fakultete, zalogo lahko preverite v COBISS-u. Povezava se odpre v novem oknu
Jezik:Angleški jezik
Vrsta gradiva:Delo ni kategorizirano
Tipologija:1.01 - Izvirni znanstveni članek
Organizacija:UNG - Univerza v Novi Gorici
Opis:We report the impact of gamma irradiation on the performance of a gold Schottky-contacted ZnO nanorod-based hydrogen sensor. RF-sputtered vertically aligned highly c-axis-oriented ZnO NRs were grown on Si(100) substrate. X-ray diffraction shows no significant change in crystal structure at low gamma doses from 1 to 5 kGy. As gamma irradiation doses increase to 10 kGy, the single crystalline ZnO structure converts to polycrystalline. The photoluminescence spectra also shows suppression of the near-band emission peak and the huge wide-band spectrum indicates the generation of structural defects at high gamma doses. At 1 kGy, the hydrogen sensor response was enhanced from 67% to 77% for 1% hydrogen in pure argon at a 150 °C operating temperature. However, at 10 kGy, the relative response decreases to 33.5%. High gamma irradiation causes displacement damage and defects in ZnO NRs, and as a result, degrades the sensor's performance as a result. Low gamma irradiation doses activate the ZnO NR surface through ionization, which enhances the sensor performance. The relative response of the hydrogen sensor was enhanced by ∼14.9% with respect to pristine ZnO using 1 kGy gamma ray treatment. © 2016 IOP Publishing Ltd.
Ključne besede:ZnO, nanorods, gamma irradiation, sensor
Leto izida:2016
Št. strani:8
Številčenje:345502, 27
PID:20.500.12556/RUNG-2888-dcaf5e62-7dd1-f27c-a193-23b65dfc2acc Novo okno
COBISS.SI-ID:4632571 Novo okno
DOI:10.1088/0957-4484/27/34/345502 Novo okno
NUK URN:URN:SI:UNG:REP:5SNVQ2MG
Datum objave v RUNG:12.01.2017
Število ogledov:4114
Število prenosov:0
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Gradivo je del revije

Naslov:Nanotechnology
Skrajšan naslov:Nanotechnology
Založnik:IOP Publishing: Hybrid Open Access
Leto izida:2016
ISSN:0957-4484

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