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Title:Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si
Authors:ID Ozden, Burcu, Department of Physics, Auburn University, Auburn, Alabama 36849, USA (Author)
ID Yang, Chungman, Department of Physics, Auburn University, Auburn, Alabama 36849, USA (Author)
ID Tong, Fei, Department of Physics, Auburn University, Auburn, Alabama 36849, USA (Author)
ID Khanal, Min, Department of Physics, Auburn University, Auburn, Alabama 36849, USA (Author)
ID Mirkhani, Vahid, Department of Physics, Auburn University, Auburn, Alabama 36849, USA (Author)
ID Hassan Sk, Mobbassar, Department of Physics, Auburn University, Auburn, Alabama 36849, USA (Author)
ID Ahyi, Ayayi, Department of Physics, Auburn University, Auburn, Alabama 36849, USA (Author)
ID Park, Minseo, Department of Physics, Auburn University, Auburn, Alabama 36849, USA (Author)
Files: This document has no files that are freely available to the public. This document may have a physical copy in the library of the organization, check the status via COBISS. Link is opened in a new window
Language:English
Work type:Not categorized
Typology:1.01 - Original Scientific Article
Organization:UNG - University of Nova Gorica
Keywords:AlGaN/GaN high electron mobility transistor, Depth-resolved ultra-violet spectroscopic photo current-voltage measurement
Year of publishing:2014
Number of pages:4
Numbering:17, 105
PID:20.500.12556/RUNG-2894-b26fc499-6889-4d70-ce94-54c11752b424 New window
COBISS.SI-ID:4634107 New window
NUK URN:URN:SI:UNG:REP:ZUDPTIG9
Publication date in RUNG:16.01.2017
Views:5474
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Record is a part of a journal

Title:Applied Physics Letters
Publisher:AIP Publishing
Year of publishing:2014
ISSN:0003-6951

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