Repozitorij Univerze v Novi Gorici

Izpis gradiva
A+ | A- | Pomoč | SLO | ENG

Naslov:Interface phenomena between CdTe and ZnTe: Cu back contact
Avtorji:ID Bosio, Alessio, University of Parma (Avtor)
ID Ciprian, Roberta, Elettra-Sincrotrone Trieste (Avtor)
ID Lamperti, Alessio, CNR-IMM Agrate (Avtor)
ID Rago, I, Elettra-Sincrotrone Trieste (Avtor)
ID Ressel, Barbara, University of Nova Gorica (Avtor)
ID Rosa, Greta, University of Parma (Avtor)
ID Stupar, Matija, University of Nova Gorica (Avtor)
ID Weschke, E, Helmholtz Zentrum (Avtor)
Datoteke: Gradivo nima datotek, ki so prostodostopne za javnost. Gradivo je morda fizično dosegljivo v knjižnici fakultete, zalogo lahko preverite v COBISS-u. Povezava se odpre v novem oknu
Jezik:Angleški jezik
Vrsta gradiva:Delo ni kategorizirano
Tipologija:1.01 - Izvirni znanstveni članek
Organizacija:UNG - Univerza v Novi Gorici
Opis:Thin film technology has reached a maturity to achieve conversion efficiencies of the order of 22%. Among thin films, CdTe-based photovoltaic modules represent 80% of the total production. Nonetheless, some issues concerning back-contact are still open. In industrial process a chemical etching is required in order to make the CdTe film surface rich in Te. The Te-excess is fundamental in order to form a stable telluride compound with copper and to obtain an ohmic, low-resistance back-contact. Moreover, the Te-excess hinders the fast diffusion of copper in CdTe and its achievement of the junction region, preventing the destruction of the device. In this paper we study a ZnTe:Cu buffer layer deposited onto a CdTe film, characterized by a naturally Te-rich surface obtained with a particular chlorine heat treatment without any chemical etching. Copper diffusion and the CdTe/ZnTe:Cu interface were studied by x-ray
Ključne besede:solar cells, CdTe, ZnTe:Cu back contact
Leto izida:2018
Št. strani:186-193
Številčenje:176
PID:20.500.12556/RUNG-4255-4400aa19-6c19-9577-1837-235048d7fe07 Novo okno
COBISS.SI-ID:5273595 Novo okno
DOI:10.1016/j.solener.2018.10.035 Novo okno
NUK URN:URN:SI:UNG:REP:C5HJLILL
Datum objave v RUNG:29.11.2018
Število ogledov:4574
Število prenosov:0
Metapodatki:XML DC-XML DC-RDF
:
Kopiraj citat
  
Skupna ocena:(0 glasov)
Vaša ocena:Ocenjevanje je dovoljeno samo prijavljenim uporabnikom.
Objavi na:Bookmark and Share


Postavite miškin kazalec na naslov za izpis povzetka. Klik na naslov izpiše podrobnosti ali sproži prenos.

Gradivo je del revije

Naslov:Solar Energy
Založnik:Elsevier
Leto izida:2018

Licence

Licenca:CC BY-NC-ND 4.0, Creative Commons Priznanje avtorstva-Nekomercialno-Brez predelav 4.0 Mednarodna
Povezava:http://creativecommons.org/licenses/by-nc-nd/4.0/deed.sl
Opis:Najbolj omejujoča licenca Creative Commons. Uporabniki lahko prenesejo in delijo delo v nekomercialne namene in ga ne smejo uporabiti za nobene druge namene.
Začetek licenciranja:29.11.2018

Sekundarni jezik

Jezik:Angleški jezik
Naslov:Interface phenomena between CdTe and ZnTe: Cu back contact
Opis:Thin film technology has reached a maturity to achieve conversion efficiencies of the order of 22%. Among thin films, CdTe-based photovoltaic modules represent 80% of the total production. Nonetheless, some issues concerning back-contact are still open. In industrial process a chemical etching is required in order to make the CdTe film surface rich in Te. The Te-excess is fundamental in order to form a stable telluride compound with copper and to obtain an ohmic, low-resistance back-contact. Moreover, the Te-excess hinders the fast diffusion of copper in CdTe and its achievement of the junction region, preventing the destruction of the device. In this paper we study a ZnTe:Cu buffer layer deposited onto a CdTe film, characterized by a naturally Te-rich surface obtained with a particular chlorine heat treatment without any chemical etching. Copper diffusion and the CdTe/ZnTe:Cu interface were studied by x-ray
Ključne besede:solar cells, CdTe, ZnTe:Cu back contact


Nazaj