| Title: | Interface engineering of Ta[sub]3N[sub]5 thin film photoanode for highly efficient photoelectrochemical water splitting |
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| Authors: | ID Fu, Jie (Author)
ID Fan, Zeyu (Author)
ID Nakabayashi, Mamiko (Author)
ID Ju, Huanxin (Author)
ID Pastukhova, Nadiia (Author)
ID Xiao, Yequan (Author)
ID Feng, Chao (Author)
ID Shibata, Naoya (Author)
ID Domen, Kazunari (Author)
ID Li, Yanbo (Author) |
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| Files: |  s41467-022-28415-4.pdf (2,42 MB)
MD5: 7670127E00C1F7DC756A070A2706C6B2
 https://www.nature.com/articles/s41467-022-28415-4
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| Language: | English |
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| Work type: | Unknown |
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| Typology: | 1.01 - Original Scientific Article |
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| Organization: | UNG - University of Nova Gorica
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| Abstract: | Interface engineering is a proven strategy to improve the efficiency of thin film semiconductor based solar energy conversion devices. Ta3N5 thin film photoanode is a promising candidate for photoelectrochemical (PEC) water splitting. Yet, a concerted effort to engineer both the bottom and top interfaces of Ta3N5 thin film photoanode is still lacking. Here, we employ n-type In:GaN and p-type Mg:GaN to modify the bottom and top interfaces of Ta3N5 thin film photoanode, respectively. The obtained In:GaN/Ta3N5/Mg:GaN heterojunction photoanode shows enhanced bulk carrier separation capability and better injection efficiency at photo- anode/electrolyte interface, which lead to a record-high applied bias photon-to-current efficiency of 3.46% for Ta3N5-based photoanode. Furthermore, the roles of the In:GaN and Mg:GaN layers are distinguished through mechanistic studies. While the In:GaN layer con- tributes mainly to the enhanced bulk charge separation efficiency, the Mg:GaN layer improves the surface charge inject efficiency. This work demonstrates the crucial role of proper interface engineering for thin film-based photoanode in achieving efficient PEC water splitting. |
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| Keywords: | photocatalysis, renewable energy |
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| Year of publishing: | 2022 |
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| Number of pages: | str. 1-9 |
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| Numbering: | Vol. 13, 13 |
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| PID: | 20.500.12556/RUNG-7177  |
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| COBISS.SI-ID: | 96773379 |
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| UDC: | 54 |
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| ISSN on article: | 2041-1723 |
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| DOI: | 10.1038/s41467-022-28415-4 |
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| NUK URN: | URN:SI:UNG:REP:HFOXWRSE |
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| Publication date in RUNG: | 09.02.2022 |
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| Views: | 2770 |
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| Downloads: | 82 |
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