| Title: | Enhancement of indacenodithiophene–benzothiadiazole copolymer field-effect mobility with MXenes |
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| Authors: | ID Urbančič, Jurij (Author)
ID Pastukhova, Nadiia (Author)
ID Chhikara, Manisha (Author)
ID Chen, Hu (Author)
ID Mcculloch, Iain (Author)
ID Shi, Huanhuan (Author)
ID Shaygan Nia, Ali (Author)
ID Feng, Xinliang (Author)
ID Pavlica, Egon (Author)
ID Bratina, Gvido (Author) |
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| Files: |  https://virtual.oxfordabstracts.com/#/event/public/1649/submission/247
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| Language: | English |
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| Work type: | Unknown |
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| Typology: | 1.12 - Published Scientific Conference Contribution Abstract |
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| Organization: | UNG - University of Nova Gorica
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| Abstract: | The predominant mode of charge carrier transport in thin layers of organic semiconductors (OSs) is thermally-activated hopping between localized states. This results in lower charge mobility compared to inorganic semiconductors precluding the use of OSs in high-speed electronic devices. Therefore, significant effort is invested to improve charge carrier mobility of OS thin layers, which form the basis of most of the organic electronic devices. Recent advances in the field of two-dimensional (2D) materials stimulated their use as addition to OS thin layers to boost the charge carrier mobility. MXenes promise to deliver most of the benefits of 2D materials coupled with large scale fabrication capability. Herein we examined Ti3C2X (X is O or OH group termination) MXene, as a candidate to improve charge carrier mobility in thin layer of indacenodithiophene-co-benzothiadiazole (IDTBT), a polymer exhibiting high electron mobility in defect-free crystalline layers. In our work we demonstrate that improvement in electron mobility in solution-cast IDTBT thin layers can be achieved by depositing a non-connected network of MXene flakes at the gate-dielectric/IDBT interface. Bottom-gate field-effect transistors (FETs) comprising of Au electrodes on n-doped silicon wafer covered with 230 nm of thermally deposited SiO2 were prepared and characterized. Charge carrier mobilities determined from transfer characteristics of FETs composing neat IDTBT channels were found to be in the range of 1 - 2×10−2 cm2/Vs. Devices comprising MXene flakes at the interface between SiO2 and IDTBT, instead exhibited a factor of four increase in electron mobility, while preserving the on/off ratio of 104. |
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| Keywords: | MXene, IDTBT, charge carrier mobility, OFET |
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| Year of publishing: | 2022 |
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| Number of pages: | 1 str. |
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| PID: | 20.500.12556/RUNG-7672  |
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| COBISS.SI-ID: | 126467587 |
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| UDC: | 53 |
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| NUK URN: | URN:SI:UNG:REP:WXJMKD5Y |
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| Publication date in RUNG: | 20.10.2022 |
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| Views: | 2917 |
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| Downloads: | 11 |
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| Metadata: |    |
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