Repozitorij Univerze v Novi Gorici

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Naslov:Interface phenomena between CdTe and ZnTe: Cu back contact
Avtorji:Bosio, Alessio (Avtor)
Ciprian, Roberta (Avtor)
Lamperti, Alessio (Avtor)
Rago, I (Avtor)
Ressel, Barbara (Avtor)
Rosa, Greta (Avtor)
Stupar, Matija (Avtor)
Weschke, E (Avtor)
Datoteke:Gradivo nima datotek. Gradivo je morda fizično dosegljivo v knjižnici fakultete, zalogo lahko preverite v COBISS-u. Povezava se odpre v novem oknu
Jezik:Angleški jezik
Vrsta gradiva:Delo ni kategorizirano (r6)
Tipologija:1.01 - Izvirni znanstveni članek
Organizacija:UNG - Univerza v Novi Gorici
Opis:Thin film technology has reached a maturity to achieve conversion efficiencies of the order of 22%. Among thin films, CdTe-based photovoltaic modules represent 80% of the total production. Nonetheless, some issues concerning back-contact are still open. In industrial process a chemical etching is required in order to make the CdTe film surface rich in Te. The Te-excess is fundamental in order to form a stable telluride compound with copper and to obtain an ohmic, low-resistance back-contact. Moreover, the Te-excess hinders the fast diffusion of copper in CdTe and its achievement of the junction region, preventing the destruction of the device. In this paper we study a ZnTe:Cu buffer layer deposited onto a CdTe film, characterized by a naturally Te-rich surface obtained with a particular chlorine heat treatment without any chemical etching. Copper diffusion and the CdTe/ZnTe:Cu interface were studied by x-ray
Ključne besede:solar cells, CdTe, ZnTe:Cu back contact
Leto izida:2018
Št. strani:186-193
Številčenje:176
COBISS_ID:5273595 Povezava se odpre v novem oknu
URN:URN:SI:UNG:REP:C5HJLILL
DOI:10.1016/j.solener.2018.10.035 Povezava se odpre v novem oknu
Licenca:CC BY-NC-ND 4.0
To delo je dosegljivo pod licenco Creative Commons Priznanje avtorstva-Nekomercialno-Brez predelav 4.0 Mednarodna
Število ogledov:2080
Število prenosov:0
Metapodatki:XML RDF-CHPDL DC-XML DC-RDF
Področja:Gradivo ni uvrščeno v področja.
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Skupna ocena:(0 glasov)
Vaša ocena:Ocenjevanje je dovoljeno samo prijavljenim uporabnikom.

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Gradivo je del revije

Naslov:Solar Energy
Založnik:Elsevier
Leto izida:2018

Sekundarni jezik

Jezik:Angleški jezik
Naslov:Interface phenomena between CdTe and ZnTe: Cu back contact
Opis:Thin film technology has reached a maturity to achieve conversion efficiencies of the order of 22%. Among thin films, CdTe-based photovoltaic modules represent 80% of the total production. Nonetheless, some issues concerning back-contact are still open. In industrial process a chemical etching is required in order to make the CdTe film surface rich in Te. The Te-excess is fundamental in order to form a stable telluride compound with copper and to obtain an ohmic, low-resistance back-contact. Moreover, the Te-excess hinders the fast diffusion of copper in CdTe and its achievement of the junction region, preventing the destruction of the device. In this paper we study a ZnTe:Cu buffer layer deposited onto a CdTe film, characterized by a naturally Te-rich surface obtained with a particular chlorine heat treatment without any chemical etching. Copper diffusion and the CdTe/ZnTe:Cu interface were studied by x-ray
Ključne besede:solar cells, CdTe, ZnTe:Cu back contact


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