| Title: | EPR parameters of E' centers in v-SiO2 from first-principles calculations |
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| Authors: | ID Giacomazzi, Luigi (Author)
ID Martin-Samos, Layla (Author)
ID Boukenter, A. (Author)
ID Ouerdane, Youcef (Author)
ID Girard, Sylvain (Author)
ID Richard, Nicolas (Author) |
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| Files: |
This document has no files that are freely available to the public. This document may have a physical copy in the library of the organization, check the status via COBISS.  |
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| Language: | English |
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| Work type: | Not categorized |
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| Typology: | 1.01 - Original Scientific Article |
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| Organization: | UNG - University of Nova Gorica
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| Keywords: | silica, paramagnetic defects, EPR, disordered semiconductors |
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| Publication version: | Version of Record |
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| Year of publishing: | 2014 |
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| Number of pages: | 12 |
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| Numbering: | 1, 90 |
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| PID: | 20.500.12556/RUNG-4125-b64e07f5-cdd5-f789-c893-9c8baf111929 |
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| COBISS.SI-ID: | 3581947 |
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| ISSN on article: | 1098-0121 |
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| DOI: | doi.org/10.1103/PhysRevB.90.014108 |
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| NUK URN: | URN:SI:UNG:REP:Q9G2XWLD |
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| Publication date in RUNG: | 03.10.2018 |
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| Views: | 3958 |
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| Downloads: | 0 |
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