21. Silica coated ▫$Bi_2Se_3$▫ topological insulator nanoparticles : an alternative route to retain their optical properties and make them biocompatibleBlaž Belec, Nina Kostevšek, Giulia Della Pelle, Sebastjan Nemec, Slavko Kralj, Martina Bergant Marušič, Sandra Gardonio, Mattia Fanetti, Matjaž Valant, 2023, original scientific article Keywords: topological insulator, bismuth selenide, photo-thermal materials, biocompatibility, nanoparticles
Published in RUNG: 22.02.2023; Views: 2128; Downloads: 3
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22. Life cycle assessment of black and greywater treatment solutions for remote and sensitive areasAndreea Oarga-Mulec, Janez Turk, Petra Gerbec, Petter D. Jenssen, Katja Malovrh Rebec, Matjaž Valant, 2023, original scientific article Keywords: life cycle assessment, sanitation systems, sustainability, remote areas, circular economy
Published in RUNG: 20.02.2023; Views: 1691; Downloads: 3
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24. Iron phosphide thin films for electrocatalytic H2 generation and water remediation studies : abstractTakwa Chouki, Manel Machreki, Jelena Topic, Lorena Butinar, Plamen Stefanov, Erika Jež, Jack S Summers, Matjaž Valant, Aaron Fait, Saim Emin, 2022, published scientific conference contribution abstract Keywords: Iron phosphide thin films
H2 generation
water remediation
Published in RUNG: 10.02.2023; Views: 1213; Downloads: 0
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25. V-ORAL17c: Cationic Covalent Organic Polymer for Bacterial Cell Detection by Electrochemical Impedance SpectroscopyTina Skorjanc, Andraz Mavric, Mads Nybo Sorensen, Gregor Mali, Changzhu Wu, Matjaž Valant, 2022, published scientific conference contribution Keywords: Electrochemical impedance spectroscopy, polymers, Menshutkin reaction, porphyrin, sensor
Published in RUNG: 30.11.2022; Views: 2412; Downloads: 0
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27. Plasma-enhanced atomic layer deposition of amorphous Ga2O3 for solar-blind photodetectionZe-Yu Fan, Min-Ji Yang, Bo-Yu Fan, Andraž Mavrič, Nadiia Pastukhova, Matjaž Valant, Bo-Lin Li, Kuang Feng, Dong-Liang Liu, Guang-Wei Deng, Qiang Zhou, Yan-Bo Li, 2022, original scientific article Abstract: Wide-bandgap gallium oxide (Ga2O3) is one of the most promising semiconductor materials for solar-blind (200 nm–280 nm) photodetection. In its amorphous form, a-Ga2O3 maintains its intrinsic optoelectronic properties while can be prepared at a low growth temperature, thus is compatible with Si integrated circuits (ICs) technology. Herein, the a-Ga2O3 film is directly deposited on pre-fabricated Au interdigital electrodes by plasma enhanced atomic layer deposition (PE-ALD) at a growth temperature of 250 °C. The stoichiometric a-Ga2O3 thin film with a low defect density is achieved owing to the mild PE-ALD condition. As a result, the fabricated Au/a-Ga2O3/Au photodetector shows a fast time response, high responsivity, and excellent wavelength selectivity for solar-blind photodetection. Furthermore, an ultra-thin MgO layer is deposited by PE-ALD to passivate the Au/a-Ga2O3/Au interface, resulting in the responsivity of 788 A/W (under 254 nm at 10 V), a 250-nm-to-400-nm rejection ratio of 9.2×103, and the rise time and the decay time of 32 ms and 6 ms, respectively. These results demonstrate that the a-Ga2O3 film grown by PE-ALD is a promising candidate for high-performance solar-blind photodetection and potentially can be integrated with Si ICs for commercial production.
Keywords: Amorphous gallium oxide, Passivation layer, Plasma enhanced atomic layer deposition, Responsivity, Solar-blind photodetector
Published in RUNG: 25.10.2022; Views: 1318; Downloads: 0
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