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Abstract: Capturing the dynamic electronic band structure of a correlated material presents a powerful capability for uncovering the complex couplings between the electronic and structural degrees of freedom. When combined with ultrafast laser excitation, new phases of matter can result, since far-from-equilibrium excited states are instantaneously populated. Here, we elucidate a general relation between ultrafast non-equilibrium electron dynamics and the size of the characteristic energy gap in a correlated electron material. We show that carrier multiplication via impact ionization can be one of the most important processes in a gapped material, and that the speed of carrier multiplication critically depends on the size of the energy gap. In the case of the charge-density wave material 1T-TiSe 2 , our data indicate that carrier multiplication and gap dynamics mutually amplify each other, which explains—on a microscopic level—the extremely fast response of this material to ultrafast optical excitation. Self-amplified photo-induced gap quenching in a correlated electron material. Available from: https://www.researchgate.net/publication/308804379_Self-amplified_photo-induced_gap_quenching_in_a_correlated_electron_material [accessed Apr 20, 2017].
Keywords: high harmonic generation, charge-density wave material, 1T-TiSe2, non-equilibrium electron dynamics, ultrafast surface science
Published in RUNG: 20.04.2017; Views: 6521; Downloads: 0
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